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DMG8880LK3-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
DMG8880LK3-VB is an N-Channel trench MOSFET produced by VBsemi, using TO252 package. It has the characteristics of positive voltage 60V, current 45A and RDS(ON) of 25mΩ@VGS=10V. The silk screen is VBE1638, gate-source voltage
--VGS=±20V, threshold voltage Vth=1.8V.
DMG8880LK3-VB is an N-Channel trench MOSFET produced by VBsemi, using TO252 package. It has the characteristics of positive voltage 60V, current 45A and RDS(ON) of 25mΩ@VGS=10V. The silk screen is VBE1638, gate-source voltage
--VGS=±20V, threshold voltage Vth=1.8V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description:
- Model: DMG8880LK3-VB
- Brand: VBsemi
- MOSFET type: N-Channel
- Maximum positive voltage: 60V
- Maximum current: 45A
- On resistance: RDS(ON)=25mΩ@VGS=10V
- Gate-source voltage:
--VGS=±20V
- Threshold voltage: Vth=1.8V
- Package: TO252
- Silk screen: VBE1638
- Model: DMG8880LK3-VB
- Brand: VBsemi
- MOSFET type: N-Channel
- Maximum positive voltage: 60V
- Maximum current: 45A
- On resistance: RDS(ON)=25mΩ@VGS=10V
- Gate-source voltage:
--VGS=±20V
- Threshold voltage: Vth=1.8V
- Package: TO252
- Silk screen: VBE1638
Domain and module applications：
3. Application fields and module examples:
1. Power management system: DMG8880LK3-VB is suitable for power switching and current control in switching power supplies, DC-DC converters and battery management systems, such as power modules for portable devices, home appliances and industrial automation equipment.
2. Electric vehicle control system: In the control system of electric vehicles, this MOSFET can be used as a power switch for motor drivers, battery managers and chargers to achieve efficient energy conversion and electric vehicle control.
3. Industrial power system: In industrial equipment and machinery, DMG8880LK3-VB can be used for switching power supplies, current control and motor starters, providing efficient energy conversion and circuit protection.
4. LED lighting applications: Due to its low on-resistance and high current capability, this MOSFET is suitable for power switches in LED drivers and lighting systems to achieve high-brightness lighting and color control.
1. Power management system: DMG8880LK3-VB is suitable for power switching and current control in switching power supplies, DC-DC converters and battery management systems, such as power modules for portable devices, home appliances and industrial automation equipment.
2. Electric vehicle control system: In the control system of electric vehicles, this MOSFET can be used as a power switch for motor drivers, battery managers and chargers to achieve efficient energy conversion and electric vehicle control.
3. Industrial power system: In industrial equipment and machinery, DMG8880LK3-VB can be used for switching power supplies, current control and motor starters, providing efficient energy conversion and circuit protection.
4. LED lighting applications: Due to its low on-resistance and high current capability, this MOSFET is suitable for power switches in LED drivers and lighting systems to achieve high-brightness lighting and color control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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