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230N06N-VB Product details
Back to previous pageProduct introduction：
### 1. Product Introduction
VBsemi's 230N06N-VB is an N-channel MOSFET suitable for a variety of power electronics applications. It has a 60V withstand voltage and 45A current carrying capacity, an internal resistance (RDS(ON)) as low as 25mΩ, and can provide stable performance at both 10V and ±20V gate-source voltages. The device adopts TO252 package, which is suitable for surface mount soldering and easy to integrate into PCB boards.
VBsemi's 230N06N-VB is an N-channel MOSFET suitable for a variety of power electronics applications. It has a 60V withstand voltage and 45A current carrying capacity, an internal resistance (RDS(ON)) as low as 25mΩ, and can provide stable performance at both 10V and ±20V gate-source voltages. The device adopts TO252 package, which is suitable for surface mount soldering and easy to integrate into PCB boards.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
### 2. Detailed parameter description
- Model: 230N06N-VB
- Silk screen: VBE1638
- Brand: VBsemi
- Channel type: N-channel
- Maximum withstand voltage: 60V
- Maximum current: 45A
- Internal resistance (RDS(ON)):
- @ VGS=10V: 25mΩ
- @
--VGS=±20V: 25mΩ
- Gate-source threshold voltage (Vth): 1.8V
- Package: TO252
- Model: 230N06N-VB
- Silk screen: VBE1638
- Brand: VBsemi
- Channel type: N-channel
- Maximum withstand voltage: 60V
- Maximum current: 45A
- Internal resistance (RDS(ON)):
- @ VGS=10V: 25mΩ
- @
--VGS=±20V: 25mΩ
- Gate-source threshold voltage (Vth): 1.8V
- Package: TO252
Domain and module applications：
### III. Application fields and module examples
1. **Power management module**
The high current carrying capacity and low internal resistance of this MOSFET make it suitable for power management modules such as DC-DC converters and AC-DC converters. It can provide stable power output under the conditions of high efficiency and high stability.
2. **Motor drive module**
In the motor drive module, 230N06N-VB can be used as the output level switch of the motor driver to control the start, stop and steering of the motor. Its low internal resistance and high current carrying capacity can ensure the high efficiency and reliability of the motor.
3. **LED lighting module**
In the LED lighting module, this MOSFET can be used as the current regulator of the LED driver to adjust the brightness of the LED by controlling its on and off state. Its low internal resistance and high power carrying capacity can ensure the stability and long life of the LED lighting system.
4. **Battery management module**
230N06N-VB can also be used in battery management modules such as charge management and discharge protection. Its high voltage resistance and high current carrying capacity can ensure the safety and reliability of the battery management system and effectively prevent overcharging and over-discharging.
5. **Power amplifier module**
Due to its high power carrying capacity and low internal resistance, this MOSFET is also suitable for power amplifier modules such as audio power amplifiers and RF power amplifiers. It can provide stable output power and high-fidelity audio signals.
1. **Power management module**
The high current carrying capacity and low internal resistance of this MOSFET make it suitable for power management modules such as DC-DC converters and AC-DC converters. It can provide stable power output under the conditions of high efficiency and high stability.
2. **Motor drive module**
In the motor drive module, 230N06N-VB can be used as the output level switch of the motor driver to control the start, stop and steering of the motor. Its low internal resistance and high current carrying capacity can ensure the high efficiency and reliability of the motor.
3. **LED lighting module**
In the LED lighting module, this MOSFET can be used as the current regulator of the LED driver to adjust the brightness of the LED by controlling its on and off state. Its low internal resistance and high power carrying capacity can ensure the stability and long life of the LED lighting system.
4. **Battery management module**
230N06N-VB can also be used in battery management modules such as charge management and discharge protection. Its high voltage resistance and high current carrying capacity can ensure the safety and reliability of the battery management system and effectively prevent overcharging and over-discharging.
5. **Power amplifier module**
Due to its high power carrying capacity and low internal resistance, this MOSFET is also suitable for power amplifier modules such as audio power amplifiers and RF power amplifiers. It can provide stable output power and high-fidelity audio signals.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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