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VB5222 Product details
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Product introduction:
VB5222 is a Dual N+P type field effect transistor produced by VBsemi and is suitable for various electronic applications. Features a dual-channel design that provides flexible functionality in a variety of circuits.
Detailed parameter description:
- VDS(V): Maximum drain-source voltage is ±20V.
- VGS(±V): Gate-source voltage range is ±20V.
- Vth(V): The turn-on voltage is 1.0V (N channel) and -1.2V (P channel).
- VGS=4.5V(mΩ): When the gate-source voltage is 4.5V, the drain-source resistance is 30 mΩ (N channel) and 79 mΩ (P channel) respectively.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 22 mΩ (N channel) and 55 mΩ (P channel) respectively.
- ID (A): Maximum drain current is 5.5A (N channel) and 3.4A (P channel) respectively.
- Technology: Using Trench technology.
VB5222 is a Dual N+P type field effect transistor produced by VBsemi and is suitable for various electronic applications. Features a dual-channel design that provides flexible functionality in a variety of circuits.
Detailed parameter description:
- VDS(V): Maximum drain-source voltage is ±20V.
- VGS(±V): Gate-source voltage range is ±20V.
- Vth(V): The turn-on voltage is 1.0V (N channel) and -1.2V (P channel).
- VGS=4.5V(mΩ): When the gate-source voltage is 4.5V, the drain-source resistance is 30 mΩ (N channel) and 79 mΩ (P channel) respectively.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 22 mΩ (N channel) and 55 mΩ (P channel) respectively.
- ID (A): Maximum drain current is 5.5A (N channel) and 3.4A (P channel) respectively.
- Technology: Using Trench technology.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±20V | 20（±V） | 1.0/-1.2V | 5.5/3.4A | 30/79(mΩ) | 22/55(mΩ) | Trench |
Product model: VB5222
Brand: VBsemi
Parameters: Dual N+P
VDS(V): ㊣20
VGS(㊣V): 20
Vth(V): 1.0/-1.2
VGS=4.5V(m次): 30/79
VGS=10V(m次): 22/55
ID (A): 5.5/3.4
Technology: Trench
Package: SOT23-6
Brand: VBsemi
Parameters: Dual N+P
VDS(V): ㊣20
VGS(㊣V): 20
Vth(V): 1.0/-1.2
VGS=4.5V(m次): 30/79
VGS=10V(m次): 22/55
ID (A): 5.5/3.4
Technology: Trench
Package: SOT23-6
Domain and module applications：
Examples of applicable fields and modules:
1. Power management: VB5222 can be used in current regulation and circuit protection modules in power management systems to provide efficient power control and stable current output.
2. Signal switch: In communication equipment, this model can be used as a signal switch module to achieve fast switching and transmission of signals.
3. Electric vehicle circuit protection: Due to its dual-channel design and high drain current capacity, VB5222 is suitable for circuit protection modules in electric vehicle circuits to ensure system safety and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
