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NTD20N06LT4G-VB Product details
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Detailed parameter description:
NTD20N06LT4G-VB is an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor), with the silk screen VBE1638, produced by VBsemi. The device has the following main parameters:
1. High rated voltage (60V) and large rated current (45A), suitable for handling high-power circuits;
2. Low on-resistance, excellent conduction performance (25mΩ @ 10V; 28mΩ @ 4.5V), which can reduce power loss;
3. ±20V silicon pole voltage (±20Vgs) and 1.8V gate voltage (1.8Vth(V)), providing flexible driving and control capabilities;
4. The package is TO252, which is easy to solder and install.
NTD20N06LT4G-VB-VBE1638 is an N-channel MOSFET device with high rated voltage and large rated current, suitable for a variety of modules requiring high power performance and flexible control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: NTD20N06LT4G-VB
Silkscreen: VBE1638
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 60V
- Rated current: 45A
- On-resistance: 25mΩ @ 10V; 28mΩ @ 4.5V
- Silicon pole voltage: ±20Vgs (±V)
- Gate voltage: 1.8Vth(V)
- Package type: TO252
Silkscreen: VBE1638
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 60V
- Rated current: 45A
- On-resistance: 25mΩ @ 10V; 28mΩ @ 4.5V
- Silicon pole voltage: ±20Vgs (±V)
- Gate voltage: 1.8Vth(V)
- Package type: TO252
Domain and module applications：
NTD20N06LT4G-VB MOSFET is commonly used in the following modules:
- Power modules: Due to its high rated voltage and large rated current, it can be widely used in power modules for stabilizing and distributing current;
- Motor drive: The low on-resistance and high power characteristics of the device make it an ideal choice for motor drive modules, which can provide high efficiency and high output power;
- Electronic equipment: Due to its flexible driving and control capabilities, NTD20N06LT4G-VB can be used in various electronic devices, such as switching power supplies, inverters, photovoltaic power generation systems, etc.
- Power modules: Due to its high rated voltage and large rated current, it can be widely used in power modules for stabilizing and distributing current;
- Motor drive: The low on-resistance and high power characteristics of the device make it an ideal choice for motor drive modules, which can provide high efficiency and high output power;
- Electronic equipment: Due to its flexible driving and control capabilities, NTD20N06LT4G-VB can be used in various electronic devices, such as switching power supplies, inverters, photovoltaic power generation systems, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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