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IPD640N06LG-VB Product details

Product introduction:


Application introduction: IPD640N06LG is suitable for high-power N-channel MOSFETs, commonly used in power switches, motor control and inverter modules.
Its high current carrying capacity makes it perform well in high current demand scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 1.7V 45A 30(mΩ) 25(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 1.7V 45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 1.7V 45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
IPD640N06LG (VBE1638) parameter description: N-channel, 60V, 45A, on-resistance 25mΩ@10V; 28mΩ@4.5V, gate-source voltage range ±20V (±V), threshold voltage 1.8V, package: TO252.

Domain and module applications:

Applicable fields and modules: Suitable for high-power applications, such as power switches, motor control and inverter modules.
High current carrying capacity meets high current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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