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IPD30N06S4L-23-VB Product details
Back to previous pageProduct introduction：
**Application Introduction:**
IPD30N06S4L-23-VB is an N-Channel trench MOSFET in TO252 package. With high voltage (60V), high current capacity (45A) and low on-resistance (25mΩ), it is suitable for high-performance electronic modules.
**Function:**
- Provide high-efficiency power conversion.
- Realize effective control of the motor.
- Realize DC to AC conversion in the inverter circuit.
**Precautions for use:**
1. **Voltage and current limit:** Do not exceed the specified voltage and current limits to avoid damage to the device.
2. **Heat dissipation:** In high-power applications, appropriate heat dissipation measures are required to ensure that the device is within the normal operating temperature range.
3. **Anti-static measures:** Take anti-static measures during handling and installation to prevent damage to the device caused by electrostatic discharge.
The above is a brief description. The specific design and application needs to be carried out according to the specific module and circuit requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**IPD30N06S4L-23-VB Detailed parameter description:**
- **Brand:** VBsemi
- **Model:** IPD30N06S4L-23-VB
- **Silkscreen:** VBE1638
- **Package:** TO252
- **Type:** N-Channel trench MOSFET
- **Voltage level:** 60V
- **Current level:** 45A
- **On-resistance (RDS(ON)):** 25mΩ @ VGS=10V;
--VGS=±20V
- **Gate-source voltage threshold (Vth):** 1.8V
- **Brand:** VBsemi
- **Model:** IPD30N06S4L-23-VB
- **Silkscreen:** VBE1638
- **Package:** TO252
- **Type:** N-Channel trench MOSFET
- **Voltage level:** 60V
- **Current level:** 45A
- **On-resistance (RDS(ON)):** 25mΩ @ VGS=10V;
--VGS=±20V
- **Gate-source voltage threshold (Vth):** 1.8V
Domain and module applications：
**Application areas:**
1. **Power module:** Used in switching power supplies and voltage regulators to provide efficient power conversion.
2. **Motor control:** As part of the motor driver, it can effectively control the motor.
3. **Inverter:** Used in inverter circuits to convert DC power to AC power.
1. **Power module:** Used in switching power supplies and voltage regulators to provide efficient power conversion.
2. **Motor control:** As part of the motor driver, it can effectively control the motor.
3. **Inverter:** Used in inverter circuits to convert DC power to AC power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
