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HUF75321D3ST-VB Product details
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Detailed parameter description:
HUF75321D3ST-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) device with a rated voltage of 60V and a maximum continuous current of 45A. Its RDS(ON) performs well at different voltages, which are 25mΩ @ 10V and 28mΩ @ 4.5V respectively. In addition, its threshold voltage (Vth) is 1.8V.
Application introduction:
TO252 package makes it suitable for a variety of applications such as industrial control, power amplifiers, power tools, electric vehicles and other high-power applications. This type of MOSFET has low on-resistance and high current handling capability, which can provide excellent performance and high efficiency, and is an ideal choice for applications requiring high-power switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: HUF75321D3ST-VB
Silkscreen: VBE1638
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 60V
- Maximum continuous current: 45A
- Static on-resistance (RDS(ON)): 25mΩ @ 10V; 28mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.8V
- Package: TO252
Silkscreen: VBE1638
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 60V
- Maximum continuous current: 45A
- Static on-resistance (RDS(ON)): 25mΩ @ 10V; 28mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.8V
- Package: TO252
Domain and module applications：
HUF75321D3ST-VB is a high performance N-channel MOSFET suitable for a variety of circuit applications, especially for applications requiring high current and high voltage. It is commonly used in modules for power switches, motor control, power converters, power inverters, battery protection circuits and other fields that require high performance MOSFETs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
