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FTD36N06N-VB Product details
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Application Introduction:
FTD36N06N-VB is an N-channel MOSFET transistor suitable for a variety of electronic devices and applications, with excellent voltage tolerance and current handling capabilities.
FTD36N06N-VB is a versatile N-channel MOSFET transistor suitable for a variety of high-power, high-voltage applications to provide excellent performance and reliability. It is particularly suitable for applications requiring high power switching and voltage control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | 30(mΩ) | 25(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: FTD36N06N-VB
Silkscreen: VBE1638
Brand: VBsemi
Parameter description:
- N-channel
- Rated voltage: 60V
- Maximum current: 45A
- Static on-resistance (RDS(ON)): 25mΩ@10V; 28mΩ@4.5V, ±20Vgs(±V)
- Threshold voltage (Vth): 1.8V
- Package type: TO252
Silkscreen: VBE1638
Brand: VBsemi
Parameter description:
- N-channel
- Rated voltage: 60V
- Maximum current: 45A
- Static on-resistance (RDS(ON)): 25mΩ@10V; 28mΩ@4.5V, ±20Vgs(±V)
- Threshold voltage (Vth): 1.8V
- Package type: TO252
Domain and module applications：
Here are some possible application areas:
1. Power modules: The FTD36N06N-VB can be used in power modules to support medium voltage and current applications, suitable for power switches, DC-DC converters and inverter designs.
2. Motor control: This MOSFET is suitable for motor control circuits and can be used in motor drive systems, electric vehicles and industrial automation equipment, supporting high current and high efficiency.
3. Battery management: This MOSFET can be used in battery management systems for battery charge and discharge control and protection, suitable for electric vehicles, solar energy storage systems and other fields.
4. DC-DC converters: In DC-DC converters, the FTD36N06N-VB can be used for voltage step-up and step-down and power conversion, suitable for industrial equipment, communication base stations and power modules.
5. Automotive electronics: In the field of automotive electronics, it can be used in electronic control units (ECUs), vehicle circuit protection and battery management systems, supporting the high power and high current requirements of automotive electronics.
1. Power modules: The FTD36N06N-VB can be used in power modules to support medium voltage and current applications, suitable for power switches, DC-DC converters and inverter designs.
2. Motor control: This MOSFET is suitable for motor control circuits and can be used in motor drive systems, electric vehicles and industrial automation equipment, supporting high current and high efficiency.
3. Battery management: This MOSFET can be used in battery management systems for battery charge and discharge control and protection, suitable for electric vehicles, solar energy storage systems and other fields.
4. DC-DC converters: In DC-DC converters, the FTD36N06N-VB can be used for voltage step-up and step-down and power conversion, suitable for industrial equipment, communication base stations and power modules.
5. Automotive electronics: In the field of automotive electronics, it can be used in electronic control units (ECUs), vehicle circuit protection and battery management systems, supporting the high power and high current requirements of automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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