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FDD5690-VB Product details

Product introduction:



- **Application Brief:**
- The FDD5690-VB is an N-channel field effect transistor (MOSFET) suitable for medium and high power switching and power supply control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 1.7V 45A 30(mΩ) 25(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 1.7V 45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 1.7V 45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N

- **Parameters:**
- Silkscreen: VBE1638
- Brand: VBsemi
- Package: TO252
- Type: N-Channel
- Rated voltage: 60V
- Rated current: 45A
- RDS(ON): 25mΩ @ VGS=10V; ±20V
- Threshold voltage: 1.8V

Domain and module applications:

**Application areas:**
- Medium and high power switch modules
- Power control modules

- **Function:**
- In medium and high power switch modules, it is used to control the conduction and disconnection of the circuit, suitable for medium and high power equipment.
- In power control modules, it is used to realize the switching and regulation of power supply, suitable for medium and high power electronic equipment.

- **Precautions for use:**
- Silkscreen VBE1638 corresponds to FDD5690-VB, ensure correct identification.
- Use within the specified voltage and current range to prevent damage to the equipment.
- Follow the circuit design and application recommendations provided by the manufacturer.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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