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STD35NF06LT4-VB Product details
Back to previous pageProduct introduction：
Detailed parameter description and application introduction:
1. Channel type: N-channel
- This means that this field effect transistor (FET) is an N-channel MOSFET, which is usually used in load switches and power amplifiers.
2. Rated voltage (VDS): 60V
- This is the maximum voltage that the channel MOSFET can withstand, exceeding this voltage may cause device damage.
3. Rated current (ID): 60A
- This is the rated current of the channel MOSFET, indicating the maximum current load it can handle.
4. Static drain-source resistance (RDS(ON)):
- RDS(ON) is the resistance of the channel MOSFET in the on state. In the case of 10V, its resistance is 9mΩ, and in the case of 4.5V, it is 11mΩ. This means that in the on state, its resistance is very low, making it effective in reducing power consumption and heat in high current loads.
5. Gate-Source Threshold Voltage (Vth): 1.87V
- Vth is the threshold voltage of the trench MOSFET, which is the voltage that needs to be applied to the gate to make the device start to conduct. In this case, the threshold voltage is 1.87V.
6. Gate-Source Voltage Rating (Vgs): ±20V (±V)
- This means that the gate-source voltage is rated to a range of plus or minus ±20V. This is used to control the on and off states of the trench MOSFET.
This type of MOSFET can be used in a variety of electronic devices and modules in order to meet the needs of power switching and control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 13(mΩ) | 10(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: STD35NF06LT4-VB
Silkscreen: VBE1615
Brand: VBsemi
Parameters: N-channel, 60V, 60A, RDS(ON) 9mΩ @ 10V, 11mΩ @ 4.5V, ±20Vgs (±V); 1.87Vth (V)
Package: TO252
Silkscreen: VBE1615
Brand: VBsemi
Parameters: N-channel, 60V, 60A, RDS(ON) 9mΩ @ 10V, 11mΩ @ 4.5V, ±20Vgs (±V); 1.87Vth (V)
Package: TO252
Domain and module applications：
This type of N-channel MOSFET is commonly used in a variety of electronic and power applications, including but not limited to:
1. Power Switch: It can be used in power switching modules, such as DC-DC converters, to effectively manage and control the flow of electrical energy.
2. Motor Drive: In motor control and drive systems, this MOSFET can be used to control the speed and direction of the motor.
3. Power Amplifier: It can be used as a power amplifier to enhance the amplitude of electrical signals and is commonly used in audio amplifiers.
4. Power Management: Used in power management systems to achieve voltage conversion and stabilization.
1. Power Switch: It can be used in power switching modules, such as DC-DC converters, to effectively manage and control the flow of electrical energy.
2. Motor Drive: In motor control and drive systems, this MOSFET can be used to control the speed and direction of the motor.
3. Power Amplifier: It can be used as a power amplifier to enhance the amplitude of electrical signals and is commonly used in audio amplifiers.
4. Power Management: Used in power management systems to achieve voltage conversion and stabilization.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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