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NTD5865NLT4G-VB Product details
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Application Introduction:
NTD5865NLT4G-VB is a high-power N-channel MOSFET suitable for electronic applications that require high voltage and high current handling capabilities.
NTD5865NLT4G-VB's high voltage and current handling capabilities, as well as low on-resistance, make it an ideal choice for a variety of high-performance, high-power electronic applications. However, when selecting and using this device, it is still necessary to understand its data sheet and performance parameters in detail to ensure that it meets the requirements of specific applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 13(mΩ) | 10(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: NTD5865NLT4G-VB
Silkscreen: VBE1615
Brand: VBsemi
Parameters:
- Type: N-channel
- Maximum withstand voltage: 60V
- Maximum current: 60A
- Static on resistance (RDS(ON)): 9mΩ @ 10V, 11mΩ @ 4.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): 1.87V
- Package type: TO252
Silkscreen: VBE1615
Brand: VBsemi
Parameters:
- Type: N-channel
- Maximum withstand voltage: 60V
- Maximum current: 60A
- Static on resistance (RDS(ON)): 9mΩ @ 10V, 11mΩ @ 4.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): 1.87V
- Package type: TO252
Domain and module applications：
Here are some possible application areas:
1. Power modules: This MOSFET can be used for power switches in power modules and can be applied to high-power applications such as industrial power supplies, power tools, and electric vehicle chargers to improve power efficiency.
2. Motor drives: The NTD5865NLT4G-VB can be used in high-power motor drive circuits such as industrial motor control, electric vehicle motor drives, etc. to achieve efficient motor operation.
3. High-power inverters: In applications that require high-power inverters, such as welding equipment and high-power electric furnaces, this MOSFET can be used as a key switching element.
4. Battery management: It can also be used in battery management systems to control the charging and discharging of batteries to ensure battery safety and performance.
5. Automotive electronics: Due to its high voltage and current characteristics, this MOSFET is also suitable for automotive electronic systems such as vehicle power management and drive control.
1. Power modules: This MOSFET can be used for power switches in power modules and can be applied to high-power applications such as industrial power supplies, power tools, and electric vehicle chargers to improve power efficiency.
2. Motor drives: The NTD5865NLT4G-VB can be used in high-power motor drive circuits such as industrial motor control, electric vehicle motor drives, etc. to achieve efficient motor operation.
3. High-power inverters: In applications that require high-power inverters, such as welding equipment and high-power electric furnaces, this MOSFET can be used as a key switching element.
4. Battery management: It can also be used in battery management systems to control the charging and discharging of batteries to ensure battery safety and performance.
5. Automotive electronics: Due to its high voltage and current characteristics, this MOSFET is also suitable for automotive electronic systems such as vehicle power management and drive control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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