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IRFR1018ETRPBF-VB Product details

Product introduction:



Application Introduction:
IRFR1018ETRPBF-VB is an N-channel field effect transistor suitable for high power electronic applications. It has low on-resistance and withstand voltage characteristics, suitable for electronic systems requiring high current and high power.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 2.5V 58A 13(mΩ) 10(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 2.5V 58A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Model: IRFR1018ETRPBF-VB
Silkscreen: VBE1615
Brand: VBsemi
Parameters:
- N-channel
- Maximum withstand voltage: 60V
- Maximum leakage current: 60A
- Static on-resistance (RDS(ON)): 9mΩ @ 10V, 11mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.87V
- Package: TO252

Domain and module applications:

Field Module Application:
1. Power Switch Module: IRFR1018ETRPBF-VB can be used in power switch applications such as high power power switches and power converters.
2. Motor Driver: In high power motor drive applications, it can provide the required high current and high efficiency.
3. High Power Amplifier: Suitable for high power amplifier modules such as audio amplifiers and RF amplifiers.

These features make IRFR1018ETRPBF-VB widely used in high power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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