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STD30NF04LT-VB Product details

Product introduction:


Application Introduction:
STD30NF04LT-VB is an N-channel field effect transistor (MOSFET) with low on-resistance and high current handling capability. It is suitable for a variety of applications, especially those that require high current switching and power control.

Detailed parameter description:
1. **Type**: This is an N-channel MOSFET, which means it turns on when the input positive voltage. This type of MOSFET is often used in switching and regulation circuits.

2. **Rated voltage (Vds)**: The maximum drain-source voltage it can withstand is 40V. This means that under normal operating conditions, its voltage should not exceed 40V.

3. **Maximum continuous current (Id)**: The maximum current handling capability of this MOSFET is 50A. It can handle high current loads.

4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on state, which affects the power consumption and efficiency of the MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 12mΩ, and at 4.5V it is 14mΩ. Low on-resistance means it can generate less power dissipation in the on state.

5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of the MOSFET is ±20V, which means that a voltage of at least ±20V is required to control its on state.

6. **Threshold voltage (Vth)**: The threshold voltage of the MOSFET is 1.78V. This is the gate-source voltage that starts the MOSFET on.

7. **Package**: This MOSFET uses a TO252 package, which is a common package type that is convenient for mounting and connecting on a circuit board.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 40V 2.5V 55A 14(mΩ) 12(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 40V 2.5V 55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 40V 2.5V 55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Model: STD30NF04LT-VB
Silkscreen: VBE1410
Brand: VBsemi
Parameters:
- Type: N-channel
- Rated voltage (Vds): 40V
- Maximum continuous current (Id): 50A
- On-resistance (RDS(ON)): 12mΩ @ 10V, 14mΩ @ 4.5V
- Gate-source voltage range (Vgs): ±20V (positive and negative)
- Threshold voltage (Vth): 1.78V
- Package: TO252

Domain and module applications:

Application areas:
STD30NF04LT-VB, this high-performance N-channel MOSFET can be used in a variety of applications, including but not limited to the following areas:

1. **Power supply**: It can be used in switching power supplies and linear power supplies to help achieve voltage conversion and current control.

2. **Motor control**: In motor drivers, it can be used to control the speed and direction of the motor.

3. **Lighting control**: In LED lighting systems, it can be used for switching and dimming control.

4. **Battery management**: In charging and discharging circuits, it can be used for battery protection and current management.

5. **Industrial automation**: Used to control and monitor industrial equipment and machines.

In short, this MOSFET is suitable for electronic circuit applications that require high current and low on-resistance, and is widely used in modules and equipment in the fields of industry, electronics, communications and power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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