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NTD5806NT4G-VB Product details
Back to previous pageProduct introduction：
Application Introduction: The NTD5806NT4G is an N-channel MOSFET designed for applications with high current requirements.
Its extremely low on-resistance (RDS(ON)) enables it to excel in high-power applications, reducing energy loss and heat generation.
Commonly used in power management, DC-DC converters, and other circuits that require efficient power conversion, such as motor drive, power amplification, and other fields.
Advantages: Extremely low on-resistance: The NTD5806NT4G has excellent conduction characteristics, which reduces conduction losses and heat generation, and improves efficiency.
Reliability: As a well-known semiconductor brand, VBsemi's products undergo strict quality control and have high reliability and stability.
Suitable for high-power applications: Its high current and low on-resistance characteristics enable it to excel in high-power applications, such as motor drive and power amplification.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 14(mΩ) | 12(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
NTD5806NT4G parameters: N-channel, 40V, 50A, RDS(ON), 12mΩ@10V, 14mΩ@4.5V, ±20Vgs(±V); 1.78Vth(V); TO252;
Domain and module applications：
Applicable modules: NTD5806NT4G is suitable for high-power DC-DC converter modules, such as power modules in industrial automation equipment.
In these applications, high voltage needs to be converted to a voltage suitable for the load while maintaining high efficiency.
The low on-resistance of this model helps to reduce conversion losses, improve efficiency, and ensure stable and reliable operation of the module.
In short, as a high-power N-channel MOSFET, NTD5806NT4G has obvious advantages in high-current, high-efficiency applications and is suitable for a variety of fields requiring high-power conversion and control.
In these applications, high voltage needs to be converted to a voltage suitable for the load while maintaining high efficiency.
The low on-resistance of this model helps to reduce conversion losses, improve efficiency, and ensure stable and reliable operation of the module.
In short, as a high-power N-channel MOSFET, NTD5806NT4G has obvious advantages in high-current, high-efficiency applications and is suitable for a variety of fields requiring high-power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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