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IPD90N04S4-05-VB Product details
Back to previous pageProduct introduction：
**Product Application Introduction:**
IPD90N04S4-05-VB is an N-channel MOSFET with high rated current carrying capacity and very low drain-source resistance, suitable for power switching and amplifier applications in high-power electronic devices and modules. The performance parameters of this MOSFET make it suitable for a variety of fields.
IPD90N04S4-05-VB MOSFET is very useful in applications that require high power, high current carrying capacity and low resistance, and is used for power control, current switching and power supply connection. Due to its performance parameters, it plays a key role in electronic modules and equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Model:** IPD90N04S4-05-VB
**Silkscreen:** VBE1405
**Brand:** VBsemi
**Parameters:**
- Channel type: N-channel
- Rated voltage: 40V
- Maximum current: 85A
- Static drain-source resistance (RDS(ON)): 4mΩ @ 10V, 5mΩ @ 4.5V
- Gate-source voltage threshold (Vth): 1.85V
- Standard gate-source voltage (±V): ±20V
- Package: TO252
**Silkscreen:** VBE1405
**Brand:** VBsemi
**Parameters:**
- Channel type: N-channel
- Rated voltage: 40V
- Maximum current: 85A
- Static drain-source resistance (RDS(ON)): 4mΩ @ 10V, 5mΩ @ 4.5V
- Gate-source voltage threshold (Vth): 1.85V
- Standard gate-source voltage (±V): ±20V
- Package: TO252
Domain and module applications：
**Product Application Areas:**
1. **Power Switch:** This type of MOSFET can be used in high-power power switch applications to switch power connections in circuits, such as power management units and power switches.
2. **Motor Drive:** Suitable for high-power motor drive circuits, such as industrial motors and high-power motor control applications.
3. **Battery Protection:** Used in battery protection circuits to control the charging and discharging of batteries to ensure battery safety and performance.
4. **High Power Inverter and Power Inverter:** In high-power inverter circuits, it is used to convert DC power to AC power, commonly used in industrial inverters and power inverters.
5. **Power Amplifier:** Used in high-power amplifier designs, such as power amplifiers in audio systems and wireless communication equipment.
1. **Power Switch:** This type of MOSFET can be used in high-power power switch applications to switch power connections in circuits, such as power management units and power switches.
2. **Motor Drive:** Suitable for high-power motor drive circuits, such as industrial motors and high-power motor control applications.
3. **Battery Protection:** Used in battery protection circuits to control the charging and discharging of batteries to ensure battery safety and performance.
4. **High Power Inverter and Power Inverter:** In high-power inverter circuits, it is used to convert DC power to AC power, commonly used in industrial inverters and power inverters.
5. **Power Amplifier:** Used in high-power amplifier designs, such as power amplifiers in audio systems and wireless communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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