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ME20N03-VB Product details
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Application Introduction:
ME20N03-VB is an N-channel field effect transistor (MOSFET) device with low drain-source resistance and high current handling capability, suitable for a variety of high-power electronic applications.
ME20N03-VB is a high-power electronic device suitable for a variety of high-power electronic applications requiring high current handling capability, low resistance and reliability. It can be used in power management, motor control, battery protection, power switch, audio amplifier and other modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 9(mΩ) | 7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: ME20N03-VB
Silkscreen: VBE1310
Brand: VBsemi
Parameter description:
- Polarity: N-channel
- Rated voltage: 30V
- Maximum continuous drain current: 70A
- Static drain-source resistance (RDS(ON)): 7mΩ @ 10V, 9mΩ @ 4.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Turn-on voltage (gate threshold voltage): 1.8V
- Package: TO252
Silkscreen: VBE1310
Brand: VBsemi
Parameter description:
- Polarity: N-channel
- Rated voltage: 30V
- Maximum continuous drain current: 70A
- Static drain-source resistance (RDS(ON)): 7mΩ @ 10V, 9mΩ @ 4.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Turn-on voltage (gate threshold voltage): 1.8V
- Package: TO252
Domain and module applications：
Applications:
1. **Power modules**: ME20N03-VB is suitable for switching power supplies, power management modules and high-power power amplifiers, helping to improve power conversion efficiency, especially for high-power applications.
2. **Motor drives**: The high current handling capability and low resistance of this MOSFET device make it very suitable for high-power motor drives, motor control and motor protection, and can be used in industrial motors and automotive motors.
3. **Battery protection**: In high-power battery packs, such as electric vehicles, battery energy storage systems and battery protection modules, ME20N03-VB can be used for battery protection and high-current management of battery packs.
4. **Power switches**: This MOSFET can be used in high-power and high-current switching circuits, such as power switches, DC-DC converters and power inverters.
5. **Audio amplifiers**: In high-power audio amplifiers, ME20N03-VB can be used for output-level power amplification, used in sound systems and audio equipment.
1. **Power modules**: ME20N03-VB is suitable for switching power supplies, power management modules and high-power power amplifiers, helping to improve power conversion efficiency, especially for high-power applications.
2. **Motor drives**: The high current handling capability and low resistance of this MOSFET device make it very suitable for high-power motor drives, motor control and motor protection, and can be used in industrial motors and automotive motors.
3. **Battery protection**: In high-power battery packs, such as electric vehicles, battery energy storage systems and battery protection modules, ME20N03-VB can be used for battery protection and high-current management of battery packs.
4. **Power switches**: This MOSFET can be used in high-power and high-current switching circuits, such as power switches, DC-DC converters and power inverters.
5. **Audio amplifiers**: In high-power audio amplifiers, ME20N03-VB can be used for output-level power amplification, used in sound systems and audio equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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