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FDD6680-NL-VB Product details
Back to previous pageProduct introduction：
Detailed parameter description:
FDD6680-NL-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) device with a rated voltage of 30V and a maximum continuous current of 70A. Its RDS(ON) performs well at different voltages, which are 7mΩ @ 10V and 9mΩ @ 4.5V. In addition, its threshold voltage (Vth) is 1.8V.
Application introduction:
TO252 package makes it easy to integrate into various applications such as power management, power tools, automotive electronics, power amplifiers and industrial control. This type of MOSFET has low on-resistance and high current carrying capacity, which can provide excellent performance and high efficiency, and is suitable for applications requiring high power switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 9(mΩ) | 7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: FDD6680-NL-VB
Silkscreen: VBE1310
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 30V
- Maximum continuous current: 70A
- Static on-resistance (RDS(ON)): 7mΩ @ 10V, 9mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.8V
- Package: TO252
Silkscreen: VBE1310
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 30V
- Maximum continuous current: 70A
- Static on-resistance (RDS(ON)): 7mΩ @ 10V, 9mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.8V
- Package: TO252
Domain and module applications：
The FDD6680-NL-VB is typically used in high current and high power circuit applications, and is particularly suitable for modules in power switches, motor control, power converters, power inverters, and other areas that require high performance MOSFETs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
