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PHD78NQ03LT-VB Product details
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Application Introduction:
PHD78NQ03LT-VB is a high-performance N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with high current carrying capacity and low on-resistance, suitable for a variety of high-power electronic applications.
PHD78NQ03LT-VB is a high-performance N-channel MOSFET suitable for a variety of high-power electronic applications, especially those that require high current carrying capacity and low resistance. It is widely used in power modules, motor drives, battery protection modules, power switches and other modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: PHD78NQ03LT-VB
Silkscreen: VBE1307
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Maximum withstand voltage: 30V
- Maximum continuous current: 60A
- On resistance (RDS(ON)): 10mΩ @ 10Vgs, 11mΩ @ 4.5Vgs
- Threshold voltage (Vth): 1.6V
- Package type: TO252
Silkscreen: VBE1307
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Maximum withstand voltage: 30V
- Maximum continuous current: 60A
- On resistance (RDS(ON)): 10mΩ @ 10Vgs, 11mΩ @ 4.5Vgs
- Threshold voltage (Vth): 1.6V
- Package type: TO252
Domain and module applications：
Here are some of its main application areas:
1. Power modules: The low on-resistance and high current handling capability of this MOSFET make it very suitable for use in power modules such as switching regulators and DC-DC converters to provide high efficiency and stable power output.
2. Motor drive: PHD78NQ03LT-VB can be used in motor drive circuits such as motor control, electric vehicle motor drive, and motor control in industrial automation to achieve efficient motor operation.
3. Battery protection module: Due to its high current handling capability, it can also be used in battery protection modules to ensure the safety and performance of the battery during charging and discharging.
4. Power switch: This MOSFET can be used in power switches to control the on and off state of the circuit, such as the power switch in high-power electronic devices.
1. Power modules: The low on-resistance and high current handling capability of this MOSFET make it very suitable for use in power modules such as switching regulators and DC-DC converters to provide high efficiency and stable power output.
2. Motor drive: PHD78NQ03LT-VB can be used in motor drive circuits such as motor control, electric vehicle motor drive, and motor control in industrial automation to achieve efficient motor operation.
3. Battery protection module: Due to its high current handling capability, it can also be used in battery protection modules to ensure the safety and performance of the battery during charging and discharging.
4. Power switch: This MOSFET can be used in power switches to control the on and off state of the circuit, such as the power switch in high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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