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NTD50N03T4G-VB Product details
Back to previous pageProduct introduction：
**Application Introduction:**
This is an N-Channel power field effect transistor (Power MOSFET) suitable for TO252 package. Its features include 30V rated voltage, 60A rated current, low on-resistance, etc., making it suitable for medium-power electronic applications.
**Function:**
- In power switch modules, it can be used for regulating and controlling medium-power switching power supplies.
- In motor drive modules, it can be used for driving and controlling medium-power motors.
- In power inverter modules, it can be used for medium-power DC to AC power conversion.
**Precautions for use:**
- Strictly operate in accordance with the maximum ratings provided in the data sheet to prevent device damage.
- Pay attention to the electrostatic sensitivity of the device and take appropriate protective measures.
- Consider heat dissipation and temperature management in the design to ensure that the device is within the normal operating temperature range.
- Follow proper welding and installation standards to ensure reliable electrical connections and mechanical strength.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Detailed parameter description:**
- Model: NTD50N03T4G-VB
- Silk screen: VBE1307
- Brand: VBsemi
- Package: TO252
- Type: N-Channel
- Rated voltage: 30V
- Rated current: 60A
- On-resistance: 10mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage: 1.6V
- Model: NTD50N03T4G-VB
- Silk screen: VBE1307
- Brand: VBsemi
- Package: TO252
- Type: N-Channel
- Rated voltage: 30V
- Rated current: 60A
- On-resistance: 10mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage: 1.6V
Domain and module applications：
**Application fields:**
This device is commonly used in modules in the fields of power switching, motor driving, power inverter, etc. In these modules, it can be used for power regulation, current control and other functions to provide medium-power power conversion and control.
This device is commonly used in modules in the fields of power switching, motor driving, power inverter, etc. In these modules, it can be used for power regulation, current control and other functions to provide medium-power power conversion and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
