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NTD4863NT4G-VB Product details
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Application Introduction:
NTD4863NT4G-VB is an N-channel power MOSFET with high current and low on-resistance, suitable for electronic applications requiring high-performance power switching.
These are some examples of application areas where the NTD4863NT4G-VB N-channel MOSFET module may be used. The parameters of this device make it suitable for applications that need to handle high current and power, especially where low on-resistance is required. In actual applications, be sure to adhere to the electrical specifications and operating conditions in the data sheet to ensure optimal performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: NTD4863NT4G-VB
Silkscreen: VBE1307
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 30V
- Maximum continuous current: 60A
- Static on resistance (RDS(ON)): 10mΩ @ 10V, 11mΩ @ 4.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): 1.6V
- Package type: TO252
Silkscreen: VBE1307
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 30V
- Maximum continuous current: 60A
- Static on resistance (RDS(ON)): 10mΩ @ 10V, 11mΩ @ 4.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): 1.6V
- Package type: TO252
Domain and module applications：
Here are some possible application areas for the module:
1. **Power switch module**: This MOSFET can be used in power switch modules to achieve switching and regulation of power. It has high current handling capability and low on-resistance, suitable for high-power power systems.
2. **Motor control module**: The NTD4863NT4G-VB can be used in motor control modules, including DC motors, stepper motors, and brushless DC motor drives. Its low on-resistance helps improve motor efficiency and performance.
3. **Battery protection module**: In battery-powered systems, this MOSFET can be used in battery protection circuits to prevent over-discharge and over-charging. Its high current and voltage characteristics make it suitable for handling high-power batteries.
4. **DC-DC converter**: In DC-DC converters, the NTD4863NT4G-VB can be used as a switching device to help achieve voltage step-up and step-down and power conversion.
5. **Electronic Load Module**: In applications that require high current load switching, such as electronic loads or power supply test equipment, this MOSFET can be used to achieve high power switching.
1. **Power switch module**: This MOSFET can be used in power switch modules to achieve switching and regulation of power. It has high current handling capability and low on-resistance, suitable for high-power power systems.
2. **Motor control module**: The NTD4863NT4G-VB can be used in motor control modules, including DC motors, stepper motors, and brushless DC motor drives. Its low on-resistance helps improve motor efficiency and performance.
3. **Battery protection module**: In battery-powered systems, this MOSFET can be used in battery protection circuits to prevent over-discharge and over-charging. Its high current and voltage characteristics make it suitable for handling high-power batteries.
4. **DC-DC converter**: In DC-DC converters, the NTD4863NT4G-VB can be used as a switching device to help achieve voltage step-up and step-down and power conversion.
5. **Electronic Load Module**: In applications that require high current load switching, such as electronic loads or power supply test equipment, this MOSFET can be used to achieve high power switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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