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DTU09N03-VB Product details
Back to previous pageProduct introduction：
Detailed parameter description and application introduction:
1. Channel type: N-channel
- This indicates that this is an N-channel MOSFET, which is commonly used in electronic devices, especially in applications that need to control positive voltage power supplies.
2. Rated voltage (VDS): 30V
- This is the maximum voltage that the trench MOSFET can withstand, indicating that it is suitable for circuits that need to handle up to 30V.
3. Rated current (ID): 60A
- This is the rated current of the trench MOSFET, indicating that it can handle very large current loads.
4. Static drain-source resistance (RDS(ON)):
- RDS(ON) is the resistance of the trench MOSFET in the on state. In the case of 10V, its resistance is 10mΩ, and in the case of 4.5V, it is 11mΩ. This shows that in the on state, its resistance is very low, which helps to reduce power consumption and heat.
5. Gate-Source Voltage Rating (Vgs): ±20V (±V)
- This indicates that the gate-source voltage rating range is plus or minus ±20V. The gate-source voltage is used to control the on and off state of the MOSFET.
6. Threshold Voltage (Vth): 1.6V
- This is the threshold voltage of the trench MOSFET, indicating the voltage that needs to be applied to the gate in order for the device to start conducting.
This type of N-channel MOSFET is suitable for areas that need to handle high power and high current loads to meet the needs of power switching and power management, especially high power applications that need to handle positive voltage supplies. Due to its low drain-source resistance and high current rating, it is suitable for high power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 6(mΩ) | 5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: DTU09N03-VB
Silkscreen: VBE1307
Brand: VBsemi
Parameters: N-channel, 30V, 60A, RDS(ON) 10mΩ @ 10V, 11mΩ @ 4.5V, ±20Vgs (±V); 1.6Vth (V)
Package: TO252
Silkscreen: VBE1307
Brand: VBsemi
Parameters: N-channel, 30V, 60A, RDS(ON) 10mΩ @ 10V, 11mΩ @ 4.5V, ±20Vgs (±V); 1.6Vth (V)
Package: TO252
Domain and module applications：
This type of N-channel MOSFET is commonly used in various power management and switching applications, including but not limited to the following fields and modules:
1. Power switch: This MOSFET can be used in power switching modules such as DC-DC converters to achieve efficient power conversion.
2. Motor control: It can be used for motor drive and control because it can handle high current loads.
3. Power inverter: In solar inverters and UPS (uninterruptible power supply), N-channel MOSFET can be used to control the flow of power.
4. High power amplifier: In audio amplifiers and high-frequency amplifiers, it can be used for power amplification.
1. Power switch: This MOSFET can be used in power switching modules such as DC-DC converters to achieve efficient power conversion.
2. Motor control: It can be used for motor drive and control because it can handle high current loads.
3. Power inverter: In solar inverters and UPS (uninterruptible power supply), N-channel MOSFET can be used to control the flow of power.
4. High power amplifier: In audio amplifiers and high-frequency amplifiers, it can be used for power amplification.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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