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NCE30H10K-VB Product details
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Application Introduction:
NCE30H10K-VB is an N-channel field effect transistor (FET) suitable for high-power applications with high current and low on-resistance.
These applications cover a variety of high-power electronic devices and modules. The high performance and high current tolerance of NCE30H10K-VB make it an ideal component for high-power applications. It can achieve high efficiency and reliability in various high-current, high-power, low on-resistance circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 3(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: NCE30H10K-VB
Silkscreen: VBE1303
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 30V
- Maximum current: 100A
- Static on-resistance (RDS(ON)): 2mΩ @ 10V
- Static on-resistance (RDS(ON)): 3mΩ @ 4.5V
- Gate-source voltage (Vgs): ±±20V
- Threshold voltage (Vth): 1.9V
- Package: TO252
Silkscreen: VBE1303
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 30V
- Maximum current: 100A
- Static on-resistance (RDS(ON)): 2mΩ @ 10V
- Static on-resistance (RDS(ON)): 3mΩ @ 4.5V
- Gate-source voltage (Vgs): ±±20V
- Threshold voltage (Vth): 1.9V
- Package: TO252
Domain and module applications：
The main applications are as follows:
1. **Power switch:** NCE30H10K-VB can be used as a power switch to control the current flow in high current circuits. Its low on-resistance and high current tolerance make it very effective in high power applications.
2. **Motor drive:** In motor control and drive applications, this N-channel FET can be used to control the start and stop and speed control of the motor, such as DC motor drive, stepper motor drive and electric vehicle control system.
3. **Power inverter:** In inverter applications, it can be used to convert DC power to AC power, suitable for high power inverters such as solar inverters and power electronic inverters.
4. **Power amplifier:** It can be used in audio amplifiers and other power amplifiers to enhance the output power of audio signals.
5. **Battery protection:** In high current lithium battery protection circuits, NCE30H10K-VB can be used to implement battery charging and discharging control to ensure safe operation of the battery.
1. **Power switch:** NCE30H10K-VB can be used as a power switch to control the current flow in high current circuits. Its low on-resistance and high current tolerance make it very effective in high power applications.
2. **Motor drive:** In motor control and drive applications, this N-channel FET can be used to control the start and stop and speed control of the motor, such as DC motor drive, stepper motor drive and electric vehicle control system.
3. **Power inverter:** In inverter applications, it can be used to convert DC power to AC power, suitable for high power inverters such as solar inverters and power electronic inverters.
4. **Power amplifier:** It can be used in audio amplifiers and other power amplifiers to enhance the output power of audio signals.
5. **Battery protection:** In high current lithium battery protection circuits, NCE30H10K-VB can be used to implement battery charging and discharging control to ensure safe operation of the battery.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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