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AP85U03GH-HF-VB Product details
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Application Introduction:
AP85U03GH-HF-VB is an N-channel MOSFET with high current and low on-resistance characteristics, suitable for high power applications. It can be used in fields such as current switching and power amplification, providing efficient current control and power amplification.
AP85U03GH-HF-VB is suitable for multiple fields, including power switching, motor drive, battery management, power regulation and power amplifier modules. Its high current capacity and low on-resistance make it an ideal choice for handling high power applications, and can also be used in various circuit designs that require high-performance MOSFETs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | 3(mΩ) | 2(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: AP85U03GH-HF-VB
Silkscreen: VBE1303
Brand: VBsemi
Parameters:
- N-channel
- Rated voltage: 30V
- Maximum current: 100A
- On-state resistance (RDS(ON)): 2mΩ @ 10V, 3mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.9V
- Package: TO252
Silkscreen: VBE1303
Brand: VBsemi
Parameters:
- N-channel
- Rated voltage: 30V
- Maximum current: 100A
- On-state resistance (RDS(ON)): 2mΩ @ 10V, 3mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.9V
- Package: TO252
Domain and module applications：
Main features and application areas:
1. **Power switch**: AP85U03GH-HF-VB is suitable for power switching applications such as switching power supplies, DC-DC converters and switching regulators. Its high current capacity and low on-state resistance enable it to handle high-power power supplies.
2. **Motor drive**: This MOSFET can be used in motor drive circuits, including DC motors, stepper motors and three-phase motors. Its high current characteristics make it suitable for controlling various types of motors.
3. **Battery management**: In battery management systems, AP85U03GH-HF-VB can be used for battery charge and discharge control, protection and balancing to ensure the safe operation of battery packs.
4. **Power regulation**: This MOSFET can be used in power regulator circuits to adjust the output voltage and achieve efficient power regulation.
5. **Power amplifier**: In audio and RF amplifiers, AP85U03GH-HF-VB can be used for power amplification to provide high power output.
1. **Power switch**: AP85U03GH-HF-VB is suitable for power switching applications such as switching power supplies, DC-DC converters and switching regulators. Its high current capacity and low on-state resistance enable it to handle high-power power supplies.
2. **Motor drive**: This MOSFET can be used in motor drive circuits, including DC motors, stepper motors and three-phase motors. Its high current characteristics make it suitable for controlling various types of motors.
3. **Battery management**: In battery management systems, AP85U03GH-HF-VB can be used for battery charge and discharge control, protection and balancing to ensure the safe operation of battery packs.
4. **Power regulation**: This MOSFET can be used in power regulator circuits to adjust the output voltage and achieve efficient power regulation.
5. **Power amplifier**: In audio and RF amplifiers, AP85U03GH-HF-VB can be used for power amplification to provide high power output.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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