VB2355 Product details
Product introduction:
With the following parameters: VDS (drain-source voltage) is -30V, VGS (gate-source voltage) range is ±20V, and threshold voltage (Vth) is -1.7V. The on-resistance is 54mΩ at VGS=4.5V, 46mΩ at VGS=10V, and the maximum drain current (ID) is -5.6A (negative numbers represent P-channel devices).
These MOSFETs are manufactured using Trench technology and are packaged in SOT23-3.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P | -30V | 20(±V) | -1.7V | -5.6A | 54 (mΩ) | 46(mΩ) | Trench |
parameter:
-Single P
- VDS(V): -30
-VGS(㊣V): 20
- Vth(V): -1.7
- VGS=4.5V(m次): 54
- VGS=10V(m次): 46
- ID (A): -5.6
- Technology: Trench
Package: SOT23-3
Domain and module applications:
In portable electronic devices, these MOSFETs can be used in battery management modules, charging circuits and power switches due to their small package and low power consumption. In addition, in the field of automotive electronics, they can be used in drive circuits and power management units in vehicle electronic systems to provide efficient power conversion and power control. In addition, due to their high reliability and low cost, they can also be used for power switches and electric motor control in household appliances.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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