Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-20V |
12（±V） |
-0.8V |
-3.5A |
|
90 (mΩ) |
71 (mΩ) |
Trench |
**VB2212N**
**Brand:** VBsemi
**parameter:**
- **Single P:** Single P-type field effect transistor
- **VDS(V):** Collector-source voltage: -20V
- **VGS(㊣V):** Gate-source voltage range: ㊣12V
- **Vth(V):** Threshold voltage: -0.8V
- **VGS=4.5V(m次):** Drain-source resistance when gate-source voltage is 4.5V: 90m次
- **VGS=10V(m次):** Drain-source resistance when gate-source voltage is 10V: 71m次
- **ID (A):** Drain current: -3.5A
- **Technology:** Channel process
- **Package:** SOT23-3
Domain and module applications：
**Applicable areas and module examples:**
1. **Mobile device module:** VB2212N can be used for power management and charge and discharge protection circuits in mobile device modules. Its small size and high performance make it suitable for mobile phones, tablets and other mobile devices, providing stable power output and battery protection functions.
2. **LED lighting driver module:** In the LED lighting driver module, VB2212N can be used for the power control circuit of LED light strips and bulbs. Its low drain-source resistance and moderate drain current enable efficient LED driving, improving the brightness and stability of LED lighting systems.
3. **Power management module:** In the power management module, VB2212N can be used for power switching and regulating circuits in low-power electronic equipment and embedded systems. Its high threshold voltage and small package form enable compact power management designs, improving device energy efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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