VB165R01 Product details
Product introduction:
VBsemi's VB165R01 is a Single N field effect transistor manufactured using Plannar technology. It features a drain-source voltage (VDS) of up to 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The device has a maximum drain-to-source resistance (RDS(on)) of 8400mΩ and a maximum drain current (ID) of 1A. It is packaged in SOT23-3 package.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 650V | 30(±V) | 3.5V | 1A | 8400 (mΩ) | Plannar |
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, Vth (threshold voltage) is 3.5V.
- Current parameters: When VGS=10V, the drain-source resistance (RDS(on)) is 8400m次, and the maximum drain current (ID) is 1A.
- Technology: Made with Plannar technology.
Domain and module applications:
1. Industrial power module: Since VB165R01 has a high drain-source voltage and moderate drain current, it can be used in industrial power modules such as DC-DC converters or inverters.
2. LED lighting control: Its low threshold voltage and high drain-source voltage make it suitable for power switches in LED lighting control modules.
3. Automotive electronic systems: In automotive electronic systems, VB165R01 can be used as a power switch module in the battery management system or the electric drive system of electric vehicles.
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