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VB162K Product details

Product introduction:

The VB162K is a single N-channel MOSFET suitable for low power circuit applications. It is characterized by low drain current and low power consumption, making it suitable for applications requiring circuits with low power consumption and high stability. Using Trench technology, it has high gate-source resistance and is suitable for low-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 60V 20(±V) 1.7V 0.3A 3100 (mΩ) 2800 (mΩ) Trench
parameter:
- Structure: Single N
- Rated drain-source voltage (VDS): 60V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Gate-source resistance (VGS=4.5V): 3100 m次
- Gate-source resistance (VGS=10V): 2800 m次
- Rated drain current (ID): 0.3A
- Technology: Trench
-Package: SOT23-3

Domain and module applications:


for example:
1. Signal switch module: Since VB162K has low drain current and power consumption, it is suitable for use as a signal switch tube, such as power switch, circuit control, etc. in the circuit.
2. Battery management module: In circuits that require battery charge and discharge management, VB162K can be used as a charge and discharge tube to control the battery charge and discharge process to ensure the safety and stability of the battery.
3. Sensor interface module: In the sensor interface circuit, VB162K can be used as a switching element of the circuit to control the working status of the sensor, such as turning on or off the sensor to collect data.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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