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VB1240B Product details

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Product introduction：

VB1240B is a single N-type MOSFET. Its main features include 20V drain-source voltage (VDS), 20V gate-source voltage (VGS), 0.5~1.5V threshold voltage (Vth), 25mΩ (VGS =2.5V) and on-resistance (RDS(on)) of 20mΩ (VGS=4.5V), and a drain current (ID) of 6A. It is manufactured using Trench process and packaged as SOT23-3.

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 20V 20（±V） 0.5~1.5V 6A 25(mΩ) 20 (mΩ) Trench
Product model: VB1240B
Brand: VBsemi
parameter:
- Single N type
- VDS(V): 20
- VGS(㊣V): 20
- Vth(V): 0.5~1.5
- RDS(on) VGS=2.5V(m次): 25
- RDS(on) VGS=4.5V(m次): 20
- ID (A): 6
- Technology: Trench
Package: SOT23-3

Domain and module applications：

Due to its low threshold voltage, low on-resistance and high drain current, VB1240B is suitable for circuit design and module applications in a variety of fields. For example,
In low-power electronic equipment, it can be used as a power switch in a power management module; in an LED lighting driver, it can be used as a switching tube in an LED drive circuit; in an electric vehicle circuit, it can be used for charge and discharge control in a battery management system. Module; in industrial automation, it can be used in fields such as motor control and power switch modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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