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VB1201K Product details
Back to previous pageProduct introduction：
VB1201K is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) produced by VBsemi. The device has the following detailed parameters:
- VDS(V): 200V - Drain-source voltage
- VGS(±V): 20V - Gate-source voltage
- Vth(V): 3V - Threshold voltage
- VGS=10V(mΩ): 1400mΩ - On-resistance when gate-source voltage is 10V
- ID (A): 0.6A - Drain current
- Technology: Trench - Made using trench technology
- Package: SOT23-3 - SOT23-3 package form
VB1201K MOSFET is suitable for applications requiring small power, small size and low power characteristics, including small electronic modules, signal amplification modules and power management modules.
- VDS(V): 200V - Drain-source voltage
- VGS(±V): 20V - Gate-source voltage
- Vth(V): 3V - Threshold voltage
- VGS=10V(mΩ): 1400mΩ - On-resistance when gate-source voltage is 10V
- ID (A): 0.6A - Drain current
- Technology: Trench - Made using trench technology
- Package: SOT23-3 - SOT23-3 package form
VB1201K MOSFET is suitable for applications requiring small power, small size and low power characteristics, including small electronic modules, signal amplification modules and power management modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 200V | 20（±V） | 3V | 0.6A | 1400 (mΩ) | Trench |
Parameter: Single N
VDS(V): 200
VGS(㊣V): 20
Vth(V): 3
VGS=10V(m次): 1400
ID(A): 0.6
Technology: Trench
Package: SOT23-3
VDS(V): 200
VGS(㊣V): 20
Vth(V): 3
VGS=10V(m次): 1400
ID(A): 0.6
Technology: Trench
Package: SOT23-3
Domain and module applications：
VB1201K is suitable for a variety of fields and modules, such as:
1. Small electronic modules: Due to its small SOT23-3 package and low power characteristics, VB1201K is suitable for small electronic modules such as portable devices, smart sensors and consumer electronics. The advantages of its low on-resistance and trench technology manufacturing enable it to achieve efficient energy conversion and energy saving.
2. Signal amplification module: This device is suitable for signal amplification modules, such as audio amplifiers, amplifiers and sensor interface circuits. Its low power characteristics and stable performance enable it to work stably in the field of signal amplification and provide clear and stable signal amplification.
3. Power management module: VB1201K is suitable for low-power power management modules, such as low-power DC-DC converters, battery charge management and power switch controllers. Its small package and low power characteristics make it suitable for the needs of small power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
