VB1101M Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 100V | 20(±V) | 1.8V | 4.3A | 141 (mΩ) | 100 (mΩ) | Trench |
- Type: Single N-channel MOSFET
- Rated voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source on-resistance (m次) at VGS=4.5V: 141m次
- Drain-source on-resistance (m次) at VGS=10V: 100m次
- Drain current (ID): 4.3A
- Technology: Trench MOSFET
-Package: SOT23-3
Domain and module applications:
1. Electronic product driver module:
VB1101M is suitable for driver modules of various electronic products, such as battery charging management, LED driver, motor control, etc. Its small package and low power consumption enable efficient control of power transfer and current flow in small devices.
2. Portable electronic device module:
In portable electronic devices, VB1101M can be used in battery management, signal amplification and power conditioning modules. Its small package and low power consumption make it ideal for portable devices such as mobile phones, tablets and smart watches.
3. Consumer electronics module:
In consumer electronics, VB1101M can be used in modules such as audio amplifiers, power management, and signal processing. Its stable performance and low power consumption can improve product performance and reliability and meet consumers' needs for quality and experience.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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