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RQJ0429FQDQS-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
RQJ0429FQDQS-VB is an N-Channel MOSFET produced by VBsemi with a rated voltage of 100V and a rated current of 25A. It adopts TO252 package and is suitable for various high-voltage and high-power applications.
Detailed parameter description:
1. **Rated voltage (VDS)**: The rated voltage of 100V enables the device to be suitable for higher voltage circuits, providing a wider range of application scenarios.
2. **Rated current (ID)**: The rated current of 25A enables the device to withstand a large current load and is suitable for high-power applications.
3. **On-resistance (RDS(ON))**: At a gate-source voltage of 10V, RDS(ON) is 55mΩ, providing a lower on-resistance and reducing power loss.
4. **Threshold voltage (Vth)**: The threshold voltage of 1.4V makes the device easy to control and suitable for various circuit designs.
RQJ0429FQDQS-VB is a high-performance, high-voltage, high-power N-Channel MOSFET suitable for a variety of high-power, high-voltage applications, including industrial, automotive, solar and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | 57(mΩ) | 55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
VBsemi N-Channel MOSFET RQJ0429FQDQS-VB
Brand: VBsemi
Silkscreen: VBE1106N
Parameters:
- N-Channel channel
- Rated voltage: 100V
- Rated current: 25A
- RDS(ON)：55mΩ @ VGS=10V
- RDS(ON)：20mΩ @
--VGS=±20V
- Threshold voltage: 1.4V
Package: TO252
Brand: VBsemi
Silkscreen: VBE1106N
Parameters:
- N-Channel channel
- Rated voltage: 100V
- Rated current: 25A
- RDS(ON)：55mΩ @ VGS=10V
- RDS(ON)：20mΩ @
--VGS=±20V
- Threshold voltage: 1.4V
Package: TO252
Domain and module applications：
Examples of applicable fields and modules of this product:
1. **Power management**: Due to its high rated voltage and rated current, RQJ0429FQDQS-VB can be used in high-power power management applications such as switching power supplies and inverters, such as industrial power supplies and UPS systems.
2. **Electric vehicles**: In the electric drive system of electric vehicles, this MOSFET can be used to drive motors, battery management systems, etc., providing efficient power conversion.
3. **Industrial control**: In industrial control systems, RQJ0429FQDQS-VB can be used in high-power applications such as motor control, inverters and power switches to ensure system stability and reliability.
4. **Solar inverter**: In solar power generation systems, this device can be used in inverters to convert DC power generated by solar panels into AC power to power the grid or for independent power generation systems.
1. **Power management**: Due to its high rated voltage and rated current, RQJ0429FQDQS-VB can be used in high-power power management applications such as switching power supplies and inverters, such as industrial power supplies and UPS systems.
2. **Electric vehicles**: In the electric drive system of electric vehicles, this MOSFET can be used to drive motors, battery management systems, etc., providing efficient power conversion.
3. **Industrial control**: In industrial control systems, RQJ0429FQDQS-VB can be used in high-power applications such as motor control, inverters and power switches to ensure system stability and reliability.
4. **Solar inverter**: In solar power generation systems, this device can be used in inverters to convert DC power generated by solar panels into AC power to power the grid or for independent power generation systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
