RQJ0424FQDQS-VB Product details
Product introduction:
Product Introduction:
RQJ0424FQDQS-VB is an N-Channel MOSFET launched by VBsemi, with a rated voltage of 100V and a rated current of 25A. The device adopts TO252 package and is suitable for various applications with stability and reliability.
Detailed parameter description:
1. **Rated voltage (VDS)**: The rated voltage of 100V enables the device to withstand higher voltages and is suitable for a variety of high-voltage applications.
2. **Rated current (ID)**: The rated current of 25A enables the device to handle larger current loads and is suitable for high-power applications.
3. **On-resistance (RDS(ON))**: At a gate-source voltage of 10V, the RDS(ON) is 55mΩ, providing a relatively low on-resistance and reducing power loss.
4. **Threshold voltage (Vth)**: The threshold voltage of 1.4V makes the device easy to control and suitable for various circuit designs.
RQJ0424FQDQS-VB is a high-performance, high-voltage, high-power N-Channel MOSFET suitable for a variety of applications, including industrial, automotive, solar and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | 57(mΩ) | 55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Brand: VBsemi
Silkscreen: VBE1106N
Parameters:
- N-Channel channel
- Rated voltage: 100V
- Rated current: 25A
- RDS(ON):55mΩ @ VGS=10V
- RDS(ON):20mΩ @
--VGS=±20V
- Threshold voltage: 1.4V
Package: TO252
Domain and module applications:
1. **Power management**: RQJ0424FQDQS-VB is suitable for high-power power management applications such as switching power supplies and inverters, such as industrial power supplies and UPS systems.
2. **Automotive electronics**: In automotive electronics modules, this MOSFET can be used for on-board power management, electric vehicle control systems, such as electric window control, electric seat control, etc.
3. **Industrial control**: In industrial control systems, this device can be used for motor drives, power switches, UPS systems, etc., providing reliable power control and protection functions.
4. **Solar inverter**: In solar inverters, RQJ0424FQDQS-VB can be used to convert the DC power generated by solar panels into AC power, realizing efficient conversion of solar power generation systems.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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