RQJ0419FQDQS-VB Product details
Product introduction:
Product Introduction:
RQJ0419FQDQS-VB is an N-Channel MOSFET launched by VBsemi with a rated voltage of 100V and a rated current of 25A. The device adopts TO252 package, has good heat dissipation performance, and is suitable for a variety of applications.
Detailed parameter description:
1. **Rated voltage (VDS)**: The rated voltage of 100V enables the device to cope with higher voltage requirements and is suitable for a variety of industrial and automotive electronic applications.
2. **Rated current (ID)**: The rated current of 25A enables it to handle larger current loads and is suitable for applications requiring higher power.
3. **On-resistance (RDS(ON))**: At a gate-source voltage of 10V, the RDS(ON) is 55mΩ, providing a relatively low on-resistance, thereby reducing power loss.
4. **Threshold voltage (Vth)**: The threshold voltage of 1.4V makes the device easy to control and can be conveniently used in various circuits.
RQJ0419FQDQS-VB is a high-performance N-Channel MOSFET suitable for a variety of high-power, high-voltage applications, including industrial, automotive, LED lighting and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | 57(mΩ) | 55(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Brand: VBsemi
Silkscreen: VBE1106N
Parameters:
- N-Channel channel
- Rated voltage: 100V
- Rated current: 25A
- RDS(ON):55mΩ @ VGS=10V
- RDS(ON):20mΩ @
--VGS=±20V
- Threshold voltage: 1.4V
Package: TO252
Domain and module applications:
1. **Power management**: Due to its higher rated voltage and rated current, RQJ0419FQDQS-VB is suitable for high-power power management applications such as switching power supplies and DC-DC converters.
2. **Automotive electronics**: In automotive electronics modules, this MOSFET can be used to drive automotive electric auxiliary equipment such as electric water pumps, electric fans, etc., as well as on-board chargers and power management systems.
3. **Industrial automation**: In industrial control systems, this device can be used in high-power applications such as motor control, inverters and power switches.
4. **LED lighting**: In LED lighting systems, RQJ0419FQDQS-VB can be used in LED drivers and dimming systems to provide stable power output and efficient energy conversion.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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