Product introduction:
Application Introduction: IRLR3110ZPBF is suitable for high power N-channel MOSFETs, commonly found in power switches, motor control and inverter modules.
Its extremely low on-resistance enables it to perform well in low voltage drop scenarios.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
100V |
|
2.5V |
85A |
|
10.5(mΩ) |
8.5(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO252 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO252 |
Single-N |
100V |
|
2.5V |
85A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO252 |
Single-N |
100V |
|
2.5V |
85A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO252 |
Single-N |
|
|
|
|
|
|
|
IRLR3110ZPBF (VBE1101N) parameter description: N channel, 100V, 70A, on-resistance 9mΩ@10V, 20mΩ@4.5V, gate-source voltage range ±20V (±V), threshold voltage 3.2V, package: TO252.
Domain and module applications:
Advantages and applicable fields: Suitable for high-power applications such as power switches, motor control and inverter modules.
Extremely low on-resistance helps reduce power loss and improve efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours