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IRLR3110ZPBF-VB Product details

Product introduction:


Application Introduction: IRLR3110ZPBF is suitable for high power N-channel MOSFETs, commonly found in power switches, motor control and inverter modules.
Its extremely low on-resistance enables it to perform well in low voltage drop scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 2.5V 85A 10.5(mΩ) 8.5(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
IRLR3110ZPBF (VBE1101N) parameter description: N channel, 100V, 70A, on-resistance 9mΩ@10V, 20mΩ@4.5V, gate-source voltage range ±20V (±V), threshold voltage 3.2V, package: TO252.

Domain and module applications:

Advantages and applicable fields: Suitable for high-power applications such as power switches, motor control and inverter modules.
Extremely low on-resistance helps reduce power loss and improve efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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