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IPD110N12N3G-VB Product details
Back to previous pageProduct introduction：
**Application Introduction:**
This device is an N-Channel MOSFET, suitable for high voltage and high current applications that require forward current control, such as power switches and motor drives.
**Function:**
- Control forward current, suitable for high voltage and high current modules that require N-Channel channels.
- Play a key role in power switches and motor drives.
**Precautions for use:**
1. **Voltage and current limits:** Do not exceed the specified maximum voltage and current.
2. **Temperature control:** Pay attention to the temperature of the device during operation to avoid overheating.
3. **Threshold voltage selection:** Select the appropriate threshold voltage according to application requirements.
If you need further information or have other questions, please let me know.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | 10.5(mΩ) | 8.5(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**IPD110N12N3G-VB**
**Silkscreen: ** VBE1101N
**Brand: ** VBsemi
**Parameters: ** TO252; N—Channel, 100V; 70A; RDS(ON)=9mΩ@VGS=10V,
--VGS=±20V; Vth=3.2V
**Package: ** TO252
**Detailed parameter description: **
- **Channel type: ** N—Channel
- **Maximum withstand voltage: ** 100V
- **Maximum current: ** 70A
- **On-resistance: ** 9mΩ (at VGS=10V), 9mΩ (at
--VGS=±20V)
- **Threshold voltage: ** 3.2V
**Silkscreen: ** VBE1101N
**Brand: ** VBsemi
**Parameters: ** TO252; N—Channel, 100V; 70A; RDS(ON)=9mΩ@VGS=10V,
--VGS=±20V; Vth=3.2V
**Package: ** TO252
**Detailed parameter description: **
- **Channel type: ** N—Channel
- **Maximum withstand voltage: ** 100V
- **Maximum current: ** 70A
- **On-resistance: ** 9mΩ (at VGS=10V), 9mΩ (at
--VGS=±20V)
- **Threshold voltage: ** 3.2V
Domain and module applications：
**Application area module:**
1. **Power switch module:** Used to build a reliable forward current switching circuit to ensure the normal operation of the power supply system.
2. **Motor drive module:** Suitable for motor drive systems that require high voltage and high current control.
1. **Power switch module:** Used to build a reliable forward current switching circuit to ensure the normal operation of the power supply system.
2. **Motor drive module:** Suitable for motor drive systems that require high voltage and high current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
