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vsd090n10ms-VB Product details
Back to previous pageProduct introduction：
Detailed parameter description:
vsd090n10ms-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) device with a rated voltage of 100V and a maximum continuous current of 18A. Its RDS(ON) performs well at different voltages, which are 115mΩ @ 10V and 121mΩ @ 4.5V respectively. In addition, its threshold voltage (Vth) is 1.6V.
Application introduction:
Due to its high rated voltage and moderate current handling capacity, it is suitable for applications requiring high voltage and higher current, such as power switching, power inverters, power converters, motor control, battery protection circuits, etc. The TO252 package makes it easy to integrate into various electronic devices and circuits. This type of MOSFET has low on-resistance and high voltage handling capability, providing excellent performance and high efficiency, and is suitable for applications requiring high power switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Model: vsd090n10ms-VB
Silkscreen: VBE1101M
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 100V
- Maximum continuous current: 18A
- Static on-resistance (RDS(ON)): 115mΩ @ 10V, 121mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.6V
- Package: TO252
Silkscreen: VBE1101M
Brand: VBsemi
Parameters:
- Channel type: N-channel
- Rated voltage: 100V
- Maximum continuous current: 18A
- Static on-resistance (RDS(ON)): 115mΩ @ 10V, 121mΩ @ 4.5V, ±20Vgs (±V)
- Threshold voltage (Vth): 1.6V
- Package: TO252
Domain and module applications：
vsd090n10ms-VB is typically used in modules for power management, power switching, power converters, power inverters, and other areas where high performance MOSFETs are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
