Product introduction:
Application introduction: IRFR120NTRPBF is suitable for high-power N-channel MOSFETs, which are commonly used in power switches, motor control and inverter modules.
The larger current carrying capacity makes it perform well in high current demand scenarios.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO252 |
Single-N |
100V |
|
1.8V |
15A |
|
|
114(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO252 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO252 |
Single-N |
100V |
|
1.8V |
15A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO252 |
Single-N |
100V |
|
1.8V |
15A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO252 |
Single-N |
|
|
|
|
|
|
|
IRFR120NTRPBF (VBE1101M) parameter description: N-channel, 100V, 18A, on-resistance 115mΩ@10V, 121mΩ@4.5V, gate-source voltage range ±20V (±V), threshold voltage 1.6V, package: TO252.
Domain and module applications:
Advantages and applicable fields: Suitable for high-power applications, such as power switches, motor control and inverter modules.
Large current carrying capacity to meet high current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours