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STN8205AAST8RG-VB Product details

Product introduction:



Regenerated detailed parameter description and application introduction:

STN8205AAST8RG-VB is an N-Channel trench MOSFET in TSSOP8 package. Its main parameters include rated voltage of ±20V, rated current of 4.8A, and on-state resistance at different gate-source voltages.

**Detailed parameter description:**

1. **Rated voltage (V):** ±20V - This means that the device can work normally at a voltage of ±20V.

2. **Rated current (A):** 4.8A - This means that the maximum current that the device can withstand is 4.8 amperes.

3. **On-state resistance (RDS(ON)):** 20mΩ / 22mΩ @ VGS=4.5V, VGS=15V - This indicates the resistance of the device in the on state at different gate-source voltages. In this example, when the gate-source voltage is 4.5V or 15V, the on-state resistance is 20 milliohms and 22 milliohms respectively.

4. **Threshold Voltage (Vth):** 0.6~2V - This is the threshold voltage range of the device, that is, the gate-source voltage range at which the MOSFET starts to turn on.

STN8205AAST8RG-VB is a low-power N-Channel MOSFET suitable for various power and switching circuit applications requiring low current and low on-state resistance, especially in situations where lower rated voltage and low power are required, such as power switches, battery management, LED drivers, power modules and mobile devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Common Drain-N+N 20V 0.5~1.5V 6.6A 32(mΩ) 22(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Common Drain-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Common Drain-N+N 20V 0.5~1.5V 6.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Common Drain-N+N 20V 0.5~1.5V 6.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Common Drain-N+N
Model: STN8205AAST8RG-VB

Silkscreen: VBC6N2022

Brand: VBsemi

Parameters:

- Package: TSSOP8
- Channel type: N—Channel
- Rated voltage(V): ±20V
- Rated current(A): 4.8A
- On-state resistance(RDS(ON)): 20mΩ / 22mΩ @ VGS=4.5V, VGS=15V
- Threshold voltage(Vth): 0.6~2V

Package: TSSOP8

Domain and module applications:

STN8205AAST8RG-VB is suitable for power supply and switching circuits in various fields, including but not limited to:

1. **Power switch:** Suitable for power switch circuits, such as DC-DC converters.

2. **Battery management:** In charge and discharge control circuits, it provides efficient power switches.

3. **LED drive:** In LED lighting systems, it can be used for N-Channel MOSFET drive circuits.

4. **Power module:** Suitable for designing small power power modules and providing efficient power solutions.

5. **Mobile devices:** In mobile devices that require small and efficient power management, such as smartphones, tablets, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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