STN8205AAST8RG-VB Product details
Product introduction:
Regenerated detailed parameter description and application introduction:
STN8205AAST8RG-VB is an N-Channel trench MOSFET in TSSOP8 package. Its main parameters include rated voltage of ±20V, rated current of 4.8A, and on-state resistance at different gate-source voltages.
**Detailed parameter description:**
1. **Rated voltage (V):** ±20V - This means that the device can work normally at a voltage of ±20V.
2. **Rated current (A):** 4.8A - This means that the maximum current that the device can withstand is 4.8 amperes.
3. **On-state resistance (RDS(ON)):** 20mΩ / 22mΩ @ VGS=4.5V, VGS=15V - This indicates the resistance of the device in the on state at different gate-source voltages. In this example, when the gate-source voltage is 4.5V or 15V, the on-state resistance is 20 milliohms and 22 milliohms respectively.
4. **Threshold Voltage (Vth):** 0.6~2V - This is the threshold voltage range of the device, that is, the gate-source voltage range at which the MOSFET starts to turn on.
STN8205AAST8RG-VB is a low-power N-Channel MOSFET suitable for various power and switching circuit applications requiring low current and low on-state resistance, especially in situations where lower rated voltage and low power are required, such as power switches, battery management, LED drivers, power modules and mobile devices.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32(mΩ) | 22(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Silkscreen: VBC6N2022
Brand: VBsemi
Parameters:
- Package: TSSOP8
- Channel type: N—Channel
- Rated voltage(V): ±20V
- Rated current(A): 4.8A
- On-state resistance(RDS(ON)): 20mΩ / 22mΩ @ VGS=4.5V, VGS=15V
- Threshold voltage(Vth): 0.6~2V
Package: TSSOP8
Domain and module applications:
1. **Power switch:** Suitable for power switch circuits, such as DC-DC converters.
2. **Battery management:** In charge and discharge control circuits, it provides efficient power switches.
3. **LED drive:** In LED lighting systems, it can be used for N-Channel MOSFET drive circuits.
4. **Power module:** Suitable for designing small power power modules and providing efficient power solutions.
5. **Mobile devices:** In mobile devices that require small and efficient power management, such as smartphones, tablets, etc.
Technical support:
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