CEG8205-VB Product details
Product introduction:
**Application Introduction:**
CEG8205-VB is a dual-channel N-Channel field effect transistor with excellent characteristics such as low leakage current, low leakage voltage, and low on-resistance. It adopts TSSOP8 standard package and is suitable for a variety of electronic applications.
**Precautions for use:**
- Please use it in accordance with the specification sheet and application guide provided by the manufacturer, and ensure that the operating conditions are within the specified range of the component.
- Ensure that the circuit design is reasonable to prevent damage to the device due to overcurrent, overvoltage, etc.
- Pay attention to proper heat dissipation design, especially in high-power applications, to ensure that the device is within the normal operating temperature range.
- Follow the relevant standards for welding and packaging to ensure reliable connection between the device and the circuit board.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32(mΩ) | 22(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Silkscreen: VBC6N2022
Brand: VBsemi
Package: TSSOP8
**Detailed parameter description:**
- **Channel Type: ** 2 N-Channel
- **Maximum Drain Current: ** 4.8/4.8A (dual channel)
- **Maximum Drain-Source Voltage: ** ±20V
- **On-Resistance: ** RDS(ON)=20/22mΩ @ VGS=4.5V, VGS=15V
- **Gate Threshold Voltage: ** Vth=0.6~2V
Domain and module applications:
1. **Power switch module:** Due to the dual-channel N-Channel structure of CEG8205-VB, it is suitable for power switch modules to achieve efficient power control and management.
2. **Current control module:** Due to its low leakage current and low on-resistance, it can be used in current control modules to ensure accurate control of load current.
3. **Battery protection module:** Suitable for battery protection circuits to provide effective protection for batteries, especially in dual-channel designs.
4. **Power inverter module:** Suitable for power inverter modules, which are used to convert DC power to AC power, such as solar inverters.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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