Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
20(mΩ) |
16(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
**FDS6990AS-NL-VB detailed parameter description and application introduction:**
**Parameter description:**
- Package: SOP8
- Channel type: N-Channel (two channels)
- Rated voltage (VDS): 30V
- Rated current (ID): 8.5A
- RDS(ON): 20mΩ @ VGS=10V,
--VGS=±20V
- Gate-source voltage threshold (Vth): 1.5V
Domain and module applications：
**Main application area modules:**
1. **Power switch module:** FDS6990AS-NL-VB can be used for power switch module to achieve efficient switching and reduce power consumption.
2. **Motor drive module:** In motor control, FDS6990AS-NL-VB can be used for drive control module to achieve high-power motor drive.
3. **LED drive module:** Due to its dual-channel design, it can be used for LED drive module to achieve multi-channel independent control.
**Function:**
- Provide high current carrying capacity, suitable for scenarios requiring high power output.
- Reduce on-resistance, reduce power consumption, and improve system efficiency.
- In multi-channel applications, achieve independent control and improve system flexibility.
**Precautions for use:**
1. **Voltage limit:** Make sure to operate within the specified voltage range and do not exceed the maximum rated voltage (30V).
2. **Current Limitation:** Do not exceed the maximum allowable current (8.5A) to avoid overheating and damage.
3. **Static Electrostatic Protection:** Take static electrostatic protection measures during operation to avoid damaging sensitive MOSFET devices.
4. **Gate-Source Voltage:** Pay attention to the applicable range of the gate-source voltage (Vth) and ensure normal operation within the specified range.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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