Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
24(mΩ) |
18(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-1.7V |
-9A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Model: STS7PF30L-VB
Silkscreen: VBA2317
Brand: VBsemi
Parameters:
- Channel type: P-channel
- Rated voltage: -30V
- Maximum continuous current: -7A
- Static on resistance (RDS(ON)): 23mΩ @ 10V, 29mΩ @ 4.5V, 66mΩ @ 2.5V
- Gate-source voltage (Vgs): ±20V (±V)
- Threshold voltage (Vth): -1.37V
- Package type: SOP8
Domain and module applications：
Here are some possible application areas for the modules:
1. **Power switch module**: This MOSFET can be used in power switch modules to achieve efficient switching and regulation of power. It is suitable for portable devices, power management systems, and low-voltage power applications.
2. **Battery protection module**: In applications where the battery needs to be protected from over-discharge and over-charge, the STS7PF30L-VB can be used in battery protection circuits to ensure safe operation of the battery.
3. **DC-DC converter**: In DC-DC converters that require high efficiency, this MOSFET can be used to help achieve voltage step-up and step-down and power conversion. It is suitable for portable devices, communication equipment, and industrial applications.
4. **Motor drive module**: The STS7PF30L-VB can be used in motor drive and control modules, including DC motors, stepper motors, and brushless DC motor drives.
5. **Current control module**: In applications that require high-performance current control, this MOSFET can be used in current sensor and current amplifier modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
