Product introduction：
Detailed parameter description and application introduction:
1. Channel type: P-channel
- This indicates that this is a P-channel MOSFET, which is usually used in applications that need to control negative voltage power supplies.
2. Rated voltage (VDS): -30V
- This is the maximum negative voltage that the trench MOSFET can withstand, indicating that it is suitable for circuits that need to handle up to -30V.
3. Rated current (ID): -11A
- This is the rated current of the trench MOSFET, indicating the maximum negative current load it can handle.
4. Static drain-source resistance (RDS(ON)):
- RDS(ON) is the resistance of the trench MOSFET in the on state. In the case of 10V, its resistance is 11mΩ, and in the case of 4.5V, it is 15mΩ. This shows that in the on state, its resistance is very low, which helps to reduce power consumption and heat.
5. Gate-Source Voltage Rating (Vgs): ±20V (±V)
- This indicates that the gate-source voltage rating range is ±20V. The gate-source voltage is used to control the on and off state of the MOSFET.
6. Threshold Voltage (Vth): -1.5V
- This is the threshold voltage of the trench MOSFET, indicating the voltage that needs to be applied to the gate in order for the device to start conducting.
Application Introduction:
This type of P-channel MOSFET is commonly used in various power management and switching applications.
File download
Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-2.5V |
-13.5A |
|
15(mΩ) |
11(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-2.5V |
-13.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-P |
-30V |
|
-2.5V |
-13.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-P |
|
|
|
|
|
|
|
Model: AP4409AGEM-VB
Silkscreen: VBA2309
Brand: VBsemi
Parameters: P-channel, -30V, -11A, RDS(ON) 11mΩ @ 10V, 15mΩ @ 4.5V, ±20Vgs (±V); -1.5Vth (V)
Package: SOP8
Domain and module applications：
Including but not limited to the following fields and modules:
1. Power switch: This MOSFET can be used in power switch modules such as DC-DC converters to achieve efficient power conversion.
2. Battery management: It can be used in battery protection circuits to control battery charging and discharging and prevent over-discharge.
3. Power inverter: In solar inverters and UPS (uninterruptible power supply), P-channel MOSFET can be used to control the flow of power.
4. Power selection and switching: It can be used in power selectors and power switches to switch between different power sources.
This type of P-channel MOSFET is suitable for electronic devices and modules in a variety of fields to meet the needs of power switching and power management, especially applications that need to handle negative voltage power supplies. Due to its low drain-source resistance, it is suitable for high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
