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SI3499DV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
SI3499DV-T1-GE3-VB is a VBsemi brand P-channel field effect transistor with a single P-channel. This transistor is suitable for medium voltage, high current electronic applications. It adopts SOT23-6 package and is compact and suitable for small circuit board applications. It has a drain-source voltage tolerance of -60V and a drain current tolerance of -6.5A. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 50mΩ and the threshold voltage (Vth) is between -1V and -3V.
SI3499DV-T1-GE3-VB is a VBsemi brand P-channel field effect transistor with a single P-channel. This transistor is suitable for medium voltage, high current electronic applications. It adopts SOT23-6 package and is compact and suitable for small circuit board applications. It has a drain-source voltage tolerance of -60V and a drain current tolerance of -6.5A. When the gate-source voltage is 10V, its on-resistance (RDS(ON)) is 50mΩ and the threshold voltage (Vth) is between -1V and -3V.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -60V | -1.7V | -3.5A | 85(mΩ) | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -60V | -1.7V | -3.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -60V | -1.7V | -3.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
**Detailed parameter description:**
- Voltage withstand capability: -60V
- Drain current withstand capability: -6.5A
- On-resistance (RDS(ON)):
- When VGS=10V: 50mΩ
-
--When VGS=±20V: 50mΩ
- Threshold voltage (Vth): -1V to -3V
- Package type: SOT23-6
- Brand: VBsemi
- Voltage withstand capability: -60V
- Drain current withstand capability: -6.5A
- On-resistance (RDS(ON)):
- When VGS=10V: 50mΩ
-
--When VGS=±20V: 50mΩ
- Threshold voltage (Vth): -1V to -3V
- Package type: SOT23-6
- Brand: VBsemi
Domain and module applications：
**Application fields and module examples:**
1. **Power switch:** SI3499DV-T1-GE3-VB can be used in power switch circuits to achieve fast switching control of high voltage and high current, such as DC-DC converters, power inverters, etc.
2. **Motor drive:** In the fields of industrial and automotive electronics, SI3499DV-T1-GE3-VB can be used in motor drive circuits to achieve precise control of motors, such as motor control modules, motor drivers, etc.
3. **Battery management:** In battery management systems, SI3499DV-T1-GE3-VB can be used for charge and discharge control, battery protection and other functions to ensure the safe operation of batteries, such as battery management modules, battery protection boards, etc.
4. **LED drive:** In the field of lighting, SI3499DV-T1-GE3-VB can be used in LED drive circuits to achieve efficient control and regulation of LEDs, such as LED drive modules, LED drivers, etc.
From the above examples, it can be seen that the SI3499DV-T1-GE3-VB transistor has broad application prospects in power switching, motor driving, battery management and LED driving, and can improve the performance and reliability of the system.
1. **Power switch:** SI3499DV-T1-GE3-VB can be used in power switch circuits to achieve fast switching control of high voltage and high current, such as DC-DC converters, power inverters, etc.
2. **Motor drive:** In the fields of industrial and automotive electronics, SI3499DV-T1-GE3-VB can be used in motor drive circuits to achieve precise control of motors, such as motor control modules, motor drivers, etc.
3. **Battery management:** In battery management systems, SI3499DV-T1-GE3-VB can be used for charge and discharge control, battery protection and other functions to ensure the safe operation of batteries, such as battery management modules, battery protection boards, etc.
4. **LED drive:** In the field of lighting, SI3499DV-T1-GE3-VB can be used in LED drive circuits to achieve efficient control and regulation of LEDs, such as LED drive modules, LED drivers, etc.
From the above examples, it can be seen that the SI3499DV-T1-GE3-VB transistor has broad application prospects in power switching, motor driving, battery management and LED driving, and can improve the performance and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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