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SI3445DV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
**Product Introduction:**
SI3445DV-T1-GE3-VB is a P-Channel MOSFET produced by VBsemi. It has high withstand voltage and low on-resistance characteristics, suitable for a variety of power management, switching and driving circuits.
**Detailed parameter description:**
1. **Rated voltage (VDS):** The rated voltage of -60V makes this MOSFET suitable for a wide range of application scenarios, including low to medium power circuit designs.
2. **Rated current (ID):** The rated current of -6.5A indicates that it can handle medium power loads and is suitable for a variety of power management and driving circuits.
3. **On-resistance (RDS(ON)):** At a gate-source voltage of 10V, the on-resistance is 50mΩ, which means that the device will produce low power loss in the on state.
4. **Threshold voltage (Vth):** The threshold voltage is adjustable between -1V and -3V, which makes the device easy to control and suitable for high-efficiency circuit design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -60V | -1.7V | -3.5A | 85(mΩ) | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -60V | -1.7V | -3.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -60V | -1.7V | -3.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
**VBsemi P-Channel MOSFET SI3445DV-T1-GE3-VB**
- **Silkscreen:** VB8658
- **Brand:** VBsemi
- **Parameters:**
- P-Channel channel
- Rated voltage: -60V
- Rated current: -6.5A
- On-resistance (RDS(ON)): 50mΩ @ VGS=10V
- Threshold voltage (Vth): -1V to -3V
- **Package:** SOT23-6
- **Silkscreen:** VB8658
- **Brand:** VBsemi
- **Parameters:**
- P-Channel channel
- Rated voltage: -60V
- Rated current: -6.5A
- On-resistance (RDS(ON)): 50mΩ @ VGS=10V
- Threshold voltage (Vth): -1V to -3V
- **Package:** SOT23-6
Domain and module applications：
**Application fields and module examples:**
1. **Power management:** Can be used for load switches, power inverters and battery management systems, etc.
2. **Driver:** Suitable for motor drivers, LED drivers and fan drivers, etc.
3. **Switching circuit:** Used in circuit designs such as switching modules, DC-DC converters and regulators.
In summary, SI3445DV-T1-GE3-VB is a reliable P-Channel MOSFET suitable for a variety of low to medium power power management, switching and drive circuit applications.
1. **Power management:** Can be used for load switches, power inverters and battery management systems, etc.
2. **Driver:** Suitable for motor drivers, LED drivers and fan drivers, etc.
3. **Switching circuit:** Used in circuit designs such as switching modules, DC-DC converters and regulators.
In summary, SI3445DV-T1-GE3-VB is a reliable P-Channel MOSFET suitable for a variety of low to medium power power management, switching and drive circuit applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
