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MTB060P06N6-VB Product details
Back to previous pageProduct introduction：
### Product Introduction
MTB060P06N6-VB is a VBsemi brand P-Channel trench MOSFET with a drain-source voltage tolerance of -60V and a maximum drain current of -6.5A. Its features include low on-resistance (RDS(ON)) and negative threshold voltage (Vth), suitable for applications requiring negative voltage control. The package adopts SOT23-6, which is suitable for small circuit board design.
MTB060P06N6-VB is a VBsemi brand P-Channel trench MOSFET with a drain-source voltage tolerance of -60V and a maximum drain current of -6.5A. Its features include low on-resistance (RDS(ON)) and negative threshold voltage (Vth), suitable for applications requiring negative voltage control. The package adopts SOT23-6, which is suitable for small circuit board design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -60V | -1.7V | -3.5A | 85(mΩ) | 75(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -60V | -1.7V | -3.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -60V | -1.7V | -3.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
### Detailed parameter description
- **P-Channel**: Indicates that the device is a P-channel MOSFET, suitable for negative voltage control scenarios.
- **Drain-Source Voltage (VDS)**: -60V, indicating the maximum negative operating voltage that the device can withstand.
- **Drain Current (ID)**: Maximum -6.5A, indicating the maximum current that the device can pass in the on state, and the negative sign indicates that the current flows in the opposite direction to the N-channel device.
- **On-resistance (RDS(ON))**: 50mΩ at VGS=10V, 50mΩ at
--VGS=±20V, describing the resistance characteristics of the device in the on state.
- **Threshold Voltage (Vth)**: -1V to -3V, indicating the gate voltage range at which the device starts to conduct, and a negative value indicates that the device is a P-channel MOSFET.
- **Package**: SOT23-6, suitable for small circuit board design, with good thermal characteristics and welding performance.
- **P-Channel**: Indicates that the device is a P-channel MOSFET, suitable for negative voltage control scenarios.
- **Drain-Source Voltage (VDS)**: -60V, indicating the maximum negative operating voltage that the device can withstand.
- **Drain Current (ID)**: Maximum -6.5A, indicating the maximum current that the device can pass in the on state, and the negative sign indicates that the current flows in the opposite direction to the N-channel device.
- **On-resistance (RDS(ON))**: 50mΩ at VGS=10V, 50mΩ at
--VGS=±20V, describing the resistance characteristics of the device in the on state.
- **Threshold Voltage (Vth)**: -1V to -3V, indicating the gate voltage range at which the device starts to conduct, and a negative value indicates that the device is a P-channel MOSFET.
- **Package**: SOT23-6, suitable for small circuit board design, with good thermal characteristics and welding performance.
Domain and module applications：
### Applications and Module Examples
1. **Power Reverse Polarity Protection**: The MTB060P06N6-VB can be used in power supply circuits to implement reverse polarity protection functions to prevent damage caused by incorrect power wiring.
2. **Current Control Circuit**: In circuits that require negative current control, such as load switches and current limiters, the device can be used to implement current control and protection functions.
3. **Battery Charge and Discharge Protection**: Used in battery management systems, the MTB060P06N6-VB can be used as a charge and discharge protection switch to ensure safety and stability when charging and discharging batteries.
4. **Power Inverter**: In inverter circuits, the device can be used for switch control to achieve DC to AC conversion, such as solar inverters and UPS systems.
The above examples illustrate the wide application of the MTB060P06N6-VB in the fields of negative voltage control, power protection and inverters, and its characteristics make it an ideal choice for circuit designs that require P-channel MOSFETs.
1. **Power Reverse Polarity Protection**: The MTB060P06N6-VB can be used in power supply circuits to implement reverse polarity protection functions to prevent damage caused by incorrect power wiring.
2. **Current Control Circuit**: In circuits that require negative current control, such as load switches and current limiters, the device can be used to implement current control and protection functions.
3. **Battery Charge and Discharge Protection**: Used in battery management systems, the MTB060P06N6-VB can be used as a charge and discharge protection switch to ensure safety and stability when charging and discharging batteries.
4. **Power Inverter**: In inverter circuits, the device can be used for switch control to achieve DC to AC conversion, such as solar inverters and UPS systems.
The above examples illustrate the wide application of the MTB060P06N6-VB in the fields of negative voltage control, power protection and inverters, and its characteristics make it an ideal choice for circuit designs that require P-channel MOSFETs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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