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SI3477DV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
Application introduction:
SI3477DV-T1-GE3 (silk screen: VB8338) is a P-channel power MOSFET produced by VBsemi. The following is a detailed parameter description and application introduction:
Detailed parameter description:
SI3477DV-T1-GE3 is a P-channel power MOSFET suitable for circuits with low voltage and low power consumption. The main parameters include rated voltage of -30V, rated current of -4.8A, RDS(ON) of 49mΩ @ 10V, 54mΩ @ 4.5V, gate-source voltage range of ±±20V, gate-source threshold voltage range of -1V~-3V, and package type of SOT23-6.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 54(mΩ) | 49(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
Model: SI3477DV-T1-GE3
Silkscreen: VB8338
Brand: VBsemi
Parameters:
- Channel type: P-channel
- Rated voltage: -30V
- Rated current: -4.8A
- RDS(ON): 49mΩ @ 10V, 54mΩ @ 4.5V
- Gate-source voltage range: ±±20V
- Gate-source threshold voltage range: -1V~-3V
- Package type: SOT23-6
Silkscreen: VB8338
Brand: VBsemi
Parameters:
- Channel type: P-channel
- Rated voltage: -30V
- Rated current: -4.8A
- RDS(ON): 49mΩ @ 10V, 54mΩ @ 4.5V
- Gate-source voltage range: ±±20V
- Gate-source threshold voltage range: -1V~-3V
- Package type: SOT23-6
Domain and module applications：
Application fields:
SI3477DV-T1-GE3 (VB8338) is suitable for a variety of fields and application scenarios, mainly used in low-power circuits that require P-channel power MOSFETs. The following are some typical application fields:
1. Power management module: SI3477DV-T1-GE3 can be used in power management modules to provide efficient power conversion and stable current output, and improve the power consumption and efficiency of the system.
2. Battery management system: It is suitable for the charge and discharge control circuit in the battery management system, providing high-efficiency and reliable battery management.
3. Portable devices: SI3477DV-T1-GE3 is suitable for power management, power switching, battery management and other aspects in portable devices.
In summary, SI3477DV-T1-GE3 (VB8338) is a P-channel power MOSFET suitable for power management modules, battery management systems and portable devices. It has the characteristics of low on-resistance and high withstand voltage, and is suitable for circuits that require low power consumption and high efficiency.
SI3477DV-T1-GE3 (VB8338) is suitable for a variety of fields and application scenarios, mainly used in low-power circuits that require P-channel power MOSFETs. The following are some typical application fields:
1. Power management module: SI3477DV-T1-GE3 can be used in power management modules to provide efficient power conversion and stable current output, and improve the power consumption and efficiency of the system.
2. Battery management system: It is suitable for the charge and discharge control circuit in the battery management system, providing high-efficiency and reliable battery management.
3. Portable devices: SI3477DV-T1-GE3 is suitable for power management, power switching, battery management and other aspects in portable devices.
In summary, SI3477DV-T1-GE3 (VB8338) is a P-channel power MOSFET suitable for power management modules, battery management systems and portable devices. It has the characteristics of low on-resistance and high withstand voltage, and is suitable for circuits that require low power consumption and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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