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SI3433CDV-T1-GE3-VB Product details
Back to previous pageProduct introduction：
**Detailed parameter description and application introduction:**
This device is a P-Channel field effect transistor in a SOT23-6 package, suitable for a variety of application scenarios. The main parameters include negative voltage rating, medium current rating, and moderate on-state resistance, which enable it to have good performance under different power supply and load conditions.
**Function:**
- **Power switch module:** Used for switching power supply and voltage regulation to achieve high-efficiency power conversion.
- **Battery protection module:** Provides reliable protection for the battery to prevent overcurrent and overvoltage.
- **Signal switch module:** As part of the signal switch, ensures stable signal switching and level conversion.
**Precautions for use:**
1. Please operate according to the maximum ratings provided in the data sheet to ensure the reliability and stability of the device.
2. Consider heat dissipation requirements in the design, especially in high current and high power applications.
3. Make sure to use it within the threshold voltage range to ensure normal operation.
4. Avoid exceeding the rated voltage and current to avoid damaging the device.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 54(mΩ) | 49(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
**Product model:** SI3433CDV-T1-GE3-VB
**Silk screen:** VB8338
**Brand:** VBsemi
**Parameters:**
- Package: SOT23-6
- Type: P—Channel
- Rated voltage: -30V
- Rated current: -4.8A
- On-state resistance (RDS(ON)): 49mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage (Vth): -1~-3V
**Package:** SOT23-6
**Silk screen:** VB8338
**Brand:** VBsemi
**Parameters:**
- Package: SOT23-6
- Type: P—Channel
- Rated voltage: -30V
- Rated current: -4.8A
- On-state resistance (RDS(ON)): 49mΩ @ VGS=10V,
--VGS=±20V
- Threshold voltage (Vth): -1~-3V
**Package:** SOT23-6
Domain and module applications：
**Application areas:**
1. **Power switch module:** Due to its negative voltage and moderate current rating, it can be used for switching power supplies and voltage regulation in power switch modules.
2. **Battery protection module:** Suitable for mobile devices and battery-powered systems, providing reliable protection for batteries.
3. **Signal switch module:** In scenarios where high-performance signal switching is required, it can be used to implement signal switching and level conversion.
1. **Power switch module:** Due to its negative voltage and moderate current rating, it can be used for switching power supplies and voltage regulation in power switch modules.
2. **Battery protection module:** Suitable for mobile devices and battery-powered systems, providing reliable protection for batteries.
3. **Signal switch module:** In scenarios where high-performance signal switching is required, it can be used to implement signal switching and level conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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