NTGS4111PT1G-VB Product details

Detailed parameter description and application introduction:
1. Channel type: P-channel
- This indicates that this is a P-channel MOSFET, which is usually used in applications that need to control negative voltage power supplies.

2. Rated voltage (VDS): -30V
- This is the maximum negative voltage that the trench MOSFET can withstand, indicating that it is suitable for circuits that need to handle up to -30V.

3. Rated current (ID): -4.8A
- This is the rated current of the trench MOSFET, indicating the maximum negative current load it can handle.

4. Static drain-source resistance (RDS(ON)):
- RDS(ON) is the resistance of the trench MOSFET in the on state. In the case of 10V, its resistance is 49mΩ, and in the case of 4.5V, it is 54mΩ. This shows that in the on state, its resistance is relatively low, which helps to reduce power consumption and heat.

5. Gate-Source Voltage Rating (Vgs): ±20V (±V)
- This indicates that the gate-source voltage rating range is ±20V. The gate-source voltage is used to control the on and off state of the MOSFET.

6. Threshold Voltage Range (Vth): -1V to -3V
- This is the threshold voltage range of the trench MOSFET, indicating the voltage that needs to be applied to the gate in order for the device to start conducting. In this case, the threshold voltage range is -1V to -3V.

Application Introduction:
This type of P-channel MOSFET is commonly used in various power management and switching applications:

This type of P-channel MOSFET is suitable for electronic devices and modules in a variety of fields to meet the needs of power switching and power management, especially applications that need to handle negative voltage power supplies. Due to its low drain-source resistance, it is suitable for high power applications.