中文
English
ZXM62N03E6TA-VB Product details
Back to previous pageProduct introduction：
The VBsemi ZXM62N03E6TA-VB MOSFET is an N-channel trench MOSFET with a 30V drain-source voltage withstand capability and can withstand a maximum drain current of 6A. Its on-resistance (RDS(ON)) is 30mΩ at a gate-source voltage of 10V, 30mΩ at a gate-source voltage of ±20V, and a critical gate-source voltage (Vth) of 1.2V. The device is packaged in a SOT23-6 package.
Product Introduction:
VBsemi ZXM62N03E6TA-VB MOSFET is a small, high-performance N-channel MOSFET with low on-resistance and high drain-source voltage withstand capability. It is suitable for a variety of applications that require small size, high performance and medium current withstand capability.
Product Introduction:
VBsemi ZXM62N03E6TA-VB MOSFET is a small, high-performance N-channel MOSFET with low on-resistance and high drain-source voltage withstand capability. It is suitable for a variety of applications that require small size, high performance and medium current withstand capability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 27(mΩ) | 26(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
Detailed parameter description:
- Voltage withstand capability: 30V
- Drain current: 6A
- On-resistance (RDS(ON)): 30mΩ @ 10V, ±20V
- Critical gate-source voltage (Vth): 1.2V
- Voltage withstand capability: 30V
- Drain current: 6A
- On-resistance (RDS(ON)): 30mΩ @ 10V, ±20V
- Critical gate-source voltage (Vth): 1.2V
Domain and module applications：
Application areas and module examples:
1. Mobile devices: Due to its compact size, ZXM62N03E6TA-VB is suitable for power management and battery management modules in mobile devices such as mobile phones and tablets.
2. Power converters: It can be used in low-power power converters to help improve conversion efficiency and save space.
3. LED drivers: It is suitable for LED lighting drivers to help achieve high-efficiency LED lighting solutions.
4. Portable electronic devices: In portable electronic devices such as portable audio players, digital cameras, etc., it can be used for power switching and power management.
5. Medical equipment: It can be used in power management and control modules in medical equipment to improve the reliability and efficiency of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
