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TSM3442CX6-RF-VB Product details
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### Product Introduction
**Model:** TSM3442CX6-RF-VB
**Brand:** VBsemi
**Package:** SOT23-6
**Silkscreen:** VB7322
TSM3442CX6-RF-VB is an N-Channel trench MOSFET launched by VBsemi, which has the characteristics of low on-resistance and high switching speed, and is very suitable for low-voltage, high-current applications. The device can provide up to 6A of continuous drain current (Id) at a maximum drain-source voltage (Vds) of 30V, and its on-resistance (RDS(ON)) is only 30mΩ when the gate voltage (Vgs) is 10V. This MOSFET adopts a small SOT23-6 package, which is suitable for space-constrained design environments.
TSM3442CX6-RF-VB is an N-Channel MOSFET with excellent performance, suitable for a variety of low-voltage, high-current application scenarios, and has broad market application prospects.
**Model:** TSM3442CX6-RF-VB
**Brand:** VBsemi
**Package:** SOT23-6
**Silkscreen:** VB7322
TSM3442CX6-RF-VB is an N-Channel trench MOSFET launched by VBsemi, which has the characteristics of low on-resistance and high switching speed, and is very suitable for low-voltage, high-current applications. The device can provide up to 6A of continuous drain current (Id) at a maximum drain-source voltage (Vds) of 30V, and its on-resistance (RDS(ON)) is only 30mΩ when the gate voltage (Vgs) is 10V. This MOSFET adopts a small SOT23-6 package, which is suitable for space-constrained design environments.
TSM3442CX6-RF-VB is an N-Channel MOSFET with excellent performance, suitable for a variety of low-voltage, high-current application scenarios, and has broad market application prospects.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | 27(mΩ) | 26(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 30V | 1.7V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
### Detailed parameter description
- **Maximum drain-source voltage (Vds): ** 30V
- **Maximum drain current (Id): ** 6A
- **On-resistance (RDS(ON)): ** 30mΩ @ VGS=10V
- **Maximum gate voltage (Vgs): ** ±20V
- **Threshold voltage (Vth): ** 1.2V
- **Package type: ** SOT23-6
- **Maximum drain-source voltage (Vds): ** 30V
- **Maximum drain current (Id): ** 6A
- **On-resistance (RDS(ON)): ** 30mΩ @ VGS=10V
- **Maximum gate voltage (Vgs): ** ±20V
- **Threshold voltage (Vth): ** 1.2V
- **Package type: ** SOT23-6
Domain and module applications：
### Applications and Modules
TSM3442CX6-RF-VB is a high-performance, low on-resistance N-Channel MOSFET suitable for a variety of fields and modules. Specific application examples are as follows:
1. **Portable Electronic Devices:** Due to its small package and high current handling capability, the TSM3442CX6-RF-VB is ideal for power management and load switching applications in portable electronic devices, such as smartphones, tablets, and wearable devices. These devices often require efficient power conversion and management to extend battery life and improve device performance.
2. **DC-DC Converters:** This MOSFET can operate efficiently in a low-voltage, high-current environment, making it ideal for use in DC-DC converters to improve power conversion efficiency and reduce power consumption and heat generation.
3. **Battery Management System (BMS):** In the battery management system, the TSM3442CX6-RF-VB can effectively control the charging and discharging process, provide reliable current switching functions, and ensure the safety and reliability of the battery pack.
4. **LED drive circuit:** This device is also widely used in LED drive circuits. Its high-efficiency characteristics can provide stable current control and improve the brightness and life of LEDs.
5. **Communication equipment:** In communication equipment, TSM3442CX6-RF-VB can be used for signal amplification and power control modules to improve the overall performance and reliability of the equipment.
TSM3442CX6-RF-VB is a high-performance, low on-resistance N-Channel MOSFET suitable for a variety of fields and modules. Specific application examples are as follows:
1. **Portable Electronic Devices:** Due to its small package and high current handling capability, the TSM3442CX6-RF-VB is ideal for power management and load switching applications in portable electronic devices, such as smartphones, tablets, and wearable devices. These devices often require efficient power conversion and management to extend battery life and improve device performance.
2. **DC-DC Converters:** This MOSFET can operate efficiently in a low-voltage, high-current environment, making it ideal for use in DC-DC converters to improve power conversion efficiency and reduce power consumption and heat generation.
3. **Battery Management System (BMS):** In the battery management system, the TSM3442CX6-RF-VB can effectively control the charging and discharging process, provide reliable current switching functions, and ensure the safety and reliability of the battery pack.
4. **LED drive circuit:** This device is also widely used in LED drive circuits. Its high-efficiency characteristics can provide stable current control and improve the brightness and life of LEDs.
5. **Communication equipment:** In communication equipment, TSM3442CX6-RF-VB can be used for signal amplification and power control modules to improve the overall performance and reliability of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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